2018
DOI: 10.1002/aelm.201800087
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N‐Type Surface Doping of MAPbI3 via Charge Transfer from Small Molecules

Abstract: Organic hole and electron transport materials are regularly employed as electron‐ and hole‐blocking layers in perovskite thin‐film solar cells. In order to optimize charge extraction in the device, these organic layers can be doped using organic small molecules. However, to date there is little work carried out on direct doping of perovskite surfaces. In this report, the change in electrical properties of thin films of MAPbI3 by surface doping the film with an organic dopant molecule: cobaltocene (Co(C5H5)2) i… Show more

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Cited by 36 publications
(35 citation statements)
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References 49 publications
(80 reference statements)
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“…11,12 Molecular doping appears among the most promising techniques for perovskites, with early works suggesting efficient tuning of the carrier properties at the film surface through charge transfer with a sequentially-deposited molecular layer. 13,14 Yet, more homogeneous perovskite doping with molecular dopants is still in its infancy, showing only modest conductivity improvements. [15][16][17][18] Doping of a particular perovskite host through charge transfer requires appropriate selection of the molecular dopant.…”
Section: Introductionmentioning
confidence: 99%
“…11,12 Molecular doping appears among the most promising techniques for perovskites, with early works suggesting efficient tuning of the carrier properties at the film surface through charge transfer with a sequentially-deposited molecular layer. 13,14 Yet, more homogeneous perovskite doping with molecular dopants is still in its infancy, showing only modest conductivity improvements. [15][16][17][18] Doping of a particular perovskite host through charge transfer requires appropriate selection of the molecular dopant.…”
Section: Introductionmentioning
confidence: 99%
“…[12][13][14][15][16] Improving the performance of planar PSCs is critically dependent on the properties of both their perovskite active layers and interfaces. [17][18][19] Therefore, controlling over their interface properties to obtain efficient transport and to minimize trapping of charge carriers is essential. For instance, buffer layer is inserted to reduce the lattice mismatch induced interface stress and induce more ordered crystal growth.…”
mentioning
confidence: 99%
“…We previously found that increase the doping of ETLs can lead to decomposition of the surface of MAPbI 3 by inducing release of iodine. 42 It is possible that similar degradation happens here in the highly doped devices, increasing the resistance at the MAPbI 3 /PC 61 BM interface and blocking charge extraction from the bulk of the active layer.…”
Section: N-type Doping Of Organic Semiconductorsmentioning
confidence: 77%