N-Type Organic Field-Effect Transistor Based on Fullerene with Natural Aloe Vera/SiO₂Nanoparticles as Gate Dielectric

Abstract

This study reports on fullerene-based organic field-effect transistor (C60-based OFET) with a combination of solution-processable natural Aloe vera blended with 1.5 wt% of SiO2 nanoparticles as a natural gate dielectric. The natural gate dielectric is screen-printed on a glass substrate followed by thermally evaporation of a layer of C60 semiconductor to form a bottom-gate and top-contact OFET structure. Surface energy concept has been used to justify selection of the gate dielectric and semiconductor layers. The OFET operates under open air and exhibits an effective mobility and threshold voltage of 1.110 cm2/V s and 0 V, respectively. After two weeks exposure in air, the parameters reduce but on/off current ratio and sub-threshold swing improve significantly.