N-type al-alloyed rear junction silicon solar cells with implanted front surface field

Su, Shao-Peng; Chantarat, N.; Huang, Yu-Hung; Kang, Chih-Ming; Chen, Sean H.T.; Cheng, Liwei

doi:10.1109/pvsc.2012.6317773

Cited by 5 publications

(1 citation statement)

References 3 publications

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“…For instances, Sunpower with interdigitated back contact technology and Panasonic/Sanyo with hetero junction structure can reach above 23.7% efficiency n-type silicon cells according to the up-to-date report of technologies and efficiency [3]. A cost-effective method to fabricate 19.4% efficiency n-type solar cells has been demonstrated by the approach of aluminum-alloyed emitter and phosphorus doped front surface field (FSF) [4][5][6][7][8][9]. Despite these approaches, n-type Si wafers are not widely used in process mass production owing to complexity and difficulty in superior boron emitter formation and passivation of the boron emitter.…”

Section: Introductionmentioning

confidence: 99%

The investigation of implanted boron emitter for n-type bifacial silicon solar cells

Huang

Kang

et al. 2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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N-type silicon wafers have been more promising for developing high efficiency solar cells, and the novel technique of ion implantation has been applied for the formation of excellent quality emitters. The n-type bifacial cells have demonstrated the advantages of not only transparent sides to enhance the illuminated area for modules but also less metal paste usage for the feasibility of thin wafer applications.In this study, we achieve the fabrication of the certificated 19.45% efficiency screen-printed n-type bifacial solar cells using boron and phosphorus ion-implantation on 239 cm 2 pseudosquare Cz wafers. By using appropriate implanted doses and modified post-treatment for emitter formation, a comparably low emitter saturation current density (J oe ) of 60 fA/cm 2 was achieved. Detailed emitter and base saturation current (J ob ) along with internal quantum efficiency (IQE) analysis by PC1D simulation explain the V oc reduction by non-optimized metallization on boron emitter side and major efficiency limitation due to J ob .

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Section: Introductionmentioning

confidence: 99%

The investigation of implanted boron emitter for n-type bifacial silicon solar cells

Huang

Kang

et al. 2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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The investigation on the front surface field of aluminum rear emitter N-type silicon solar cells

Chen²,

Zhang³

et al. 2015

Solar Energy

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The influence of metallic belt on aluminum back surface field of solar cells during the firing process

Chen²,

Zhang³

et al. 2015

Journal of Renewable and Sustainable Energy

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For normal solar cell production, the front surface is upturned and the Al rear surface directly contacts with the belt during the firing process. In this paper, the influence of metallic belt on the Al back surface field was investigated. With the development of light induced plating technology, it was possible that the rear surface was upturned so that the rear surface would not directly contact with the belt. For normal structured P-type cells, the rear surface upturned (RSU) method narrowed conversion efficiency distribution. With the efficiency growing, the advantages of RSU were seen more clearly. For Al rear emitter N-type solar cells, RSU was good for the quality of rear junction. The internal quantum efficiency at the long wavelength was improved a lot. The average efficiency increased by about 0.2%(abs). The best efficiency increased to 19.93%. Additionally, RSU also reduced the rear surface void ration in passivated emitter and rear contact (PERC) cells. The average efficiency of RSU PERC cells also increased by about 0.2%(abs). The best efficiency of PERC cells with RSU method was improved to 20.38%. The most important improvement came from the rear contact. In this paper, the environment tolerance of the cells was also studied. The thimbles of the belt destroyed the Al film and made the film loose. RSU method avoided direct contact of the Al film and the belt, and made the Al films compacter during the firing process. The performances of the cells in a hot and humid environment were improved. The aspects of rear surface almost did not change after water boiling. The efficiency degradation was lower than that of the normal firing mode. RSU method was good both for the cells' efficiency and the stability improvement.

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N-type al-alloyed rear junction silicon solar cells with implanted front surface field

Cited by 5 publications

References 3 publications

The investigation of implanted boron emitter for n-type bifacial silicon solar cells

The investigation of implanted boron emitter for n-type bifacial silicon solar cells

The investigation on the front surface field of aluminum rear emitter N-type silicon solar cells

The influence of metallic belt on aluminum back surface field of solar cells during the firing process

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