N-polar AlN thin layers grown on Si(111) by plasma-assisted MBE

Ledyaev, Oleg; Pandikunta, Mahesh; Nikishin, S.

doi:10.7567/jjap.53.050306

Cited by 11 publications

(8 citation statements)

References 20 publications

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“…From MBE, it is known that nitrogen radicals or ions heavily react with surface atoms. [ 13 ] For the N 2 ‐sputtering process, it is reasonable that the mostly inert N 2 molecules do not participate in the growth process. Elementary nitrogen radicals or ions are considered the only species that contribute significantly to growth when using N 2 .…”

Section: Resultsmentioning

confidence: 99%

Sputter Epitaxy of AlN and GaN on Si(111)

Dadgar

Hörich

Borgmann

et al. 2022

Physica Status Solidi (a)

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Sputter epitaxy is a low‐cost process suited for the deposition of group‐III‐nitride semiconductors and allowing the deposition on large substrate areas at lower growth temperatures than in metal–organic vapor phase epitaxy (MOVPE). High‐quality AlN, AlGaN, and GaN epitaxially grown on Si(111) substrates by reactive magnetron sputtering are demonstrated and details on process parameters are given. With an ammonia‐based reactive sputtering process in a high‐purity environment, AlN can be grown with high crystalline quality comparable to the best MOVPE‐grown samples regarding twist and tilt and with a very low surface roughness, free of the typical columnar structure of sputtered AlN and pits. Also AlGaN, typically required for strain engineering of GaN layers grown on Si, can be grown in the entire compositional range by co‐sputtering of Al and Ga. Thin undoped buffer layer samples show high breakdown field strengths well above 2.5 × 106 V cm−1 and demonstrate the possible use for field effect transistor (FET) buffer layers.

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Section: Resultsmentioning

confidence: 99%

Sputter Epitaxy of AlN and GaN on Si(111)

Dadgar

Hörich

Borgmann

et al. 2022

Physica Status Solidi (a)

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“…Due to the rich physics introduced by polarization, such as interface charge reconstruction and space charge transfer, lattice-polarity-controlled epitaxy of nitrides on Si has also attracted tremendous interest. − To engineer the lattice-polarity of III-nitrides on nonpolar Si substrates, various approaches have been proposed and studied, including (i) substrate pretreatments, (ii) growth conditions modulation, and (iii) insert layer engineering. − Nevertheless, the nonpolar surface of Si substrates and the relatively low formation temperature of IIIA-Si eutectic make the lattice-polarity control of nitrides on Si substrates challenging. − Lattice-polarity inverted domains (IDs) have been commonly observed in GaN grown on Si, such as planar/vertical inverted domain boundaries (IDBs) in epilayers and core/shell structures with opposite lattice-polarity in nanowires, ,, which severely limit their device applications.…”

Section: Introductionmentioning

confidence: 99%

Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111)

Wang

Mondal

et al. 2022

ACS Appl. Mater. Interfaces

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Monolithic integration of wurtzite III-nitrides with nonpolar silicon (Si), the two most-produced semiconductor materials, is essential and critical for a broad range of applications in electronics, optoelectronics, quantum photonics, and renewable energy. To date, however, it has remained challenging to achieve III-nitride heterostructures on Si with controlled lattice-polarity. Herein, we show that such critical challenges of III-nitrides on Si can be fundamentally addressed through a unique interfacial modulated lattice-polarity-controlled epitaxy (IMLPCE). It is discovered that the lattice-polarity of aluminum nitride (AlN) grown on Si(111) is primarily determined by the AlSiN interlayer: N-polar and Al-polar AlN can be achieved by suppressing and promoting the AlSiN interlayer formation, respectively. Furthermore, we develop a unique active-nitrogen-free in situ annealing process to mitigate the AlSiN layer formation at the GaN/AlN interface, which can eliminate the inverted domain formation commonly seen in N-polar GaN on AlN/Si. This study provides an alternative approach for controlling the lattice-polarity of III-nitrides on Si substrates and will enable their seamless integration with the mature Si-based device technology.

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“…The first step to achieve N-polar III-N HEMTs based on the AlN platform is the epitaxial growth of high-quality N-polar AlN. Npolar AlN has been synthesized on different foreign substrates such as Si, SiC, and sapphire using techniques such as metal-organic vapor phase epitaxy (MOVPE), sputtering, and molecular beam epitaxy (MBE) (11)(12)(13)(14)(15)(16)(17)(18). Among these, optimal conditions for the MOVPE growth of N-polar AlN have been developed on C-face SiC substrates with an intentional miscut of 1° to achieve a smooth surface free of hexagonal hillocks and step bunching (13).…”

Section: Introductionmentioning

confidence: 99%

Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning

et al. 2022

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N-polar aluminum nitride (AlN) is an important building block for next-generation high-power radio frequency electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area, cost-effective N-polar AlN templates. Direct growth without any in situ surface cleaning leads to films with inverted Al polarity. It is found that Al-assisted cleaning before growth enables the epitaxial film to maintain N-polarity. The grown N-polar AlN epilayer with its smooth, pit-free surface duplicates the structural quality of the substrate, as evidenced by a clean and smooth growth interface with no noticeable extended defects generation. Near band-edge photoluminescence peaks are observed at room temperature on samples with MBE-grown layers but not on the bare AlN templates, implying the suppression of nonradiative recombination centers in the epitaxial N-polar AlN.

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N-polar AlN thin layers grown on Si(111) by plasma-assisted MBE

Cited by 11 publications

References 20 publications

Sputter Epitaxy of AlN and GaN on Si(111)

Sputter Epitaxy of AlN and GaN on Si(111)

Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111)

Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning

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