Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111)

Wang, Ping; Wang, Ding; Mondal, Shubham; Wu, Yuanpeng; Ma, Tao; Mi, Zetian

doi:10.1021/acsami.1c23381

Cited by 20 publications

(11 citation statements)

References 54 publications

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“…It is well known that in the ABF-STEM image, the darkest spots correspond to the heaviest atoms. [65,66] Therefore, we are able to configure the atomic stacking sequence of Al and N atoms, which is embedded in the ABF-STEM image (Figure 2c). Comparing with the atomic structure of wurtzite AlN, we confirmed that the lattice-polarity of the transferred AlN membrane is N-polar.…”

Section: Resultsmentioning

confidence: 99%

Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes

Gong

Jie

Wang

et al. 2023

Adv Elect Materials

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Single‐crystalline inorganic semiconductor nanomembranes (NMs) have attracted great attention over the last decade, which poses great advantages to complex device integration. Applications in heterogeneous electronics and flexible electronics have been demonstrated with various semiconductor nanomembranes. Single‐crystalline aluminum nitride (AlN), as an ultrawide‐bandgap semiconductor with great potential in applications such as high‐power electronics has not been demonstrated in its NM forms. This very first report demonstrates the creation, transfer‐printing, and characteristics of the high‐quality single‐crystalline AlN NMs. This work successfully transfers the AlN NMs onto various foreign substrates. The crystalline quality of the NMs has been characterized by a broad range of techniques before and after the transfer‐printing and no degradation in crystal quality has been observed. Interestingly, a partial relaxation of the tensile stress has been observed when comparing the original as‐grown AlN epi and the transferred AlN NMs. In addition, the transferred AlN NMs exhibits the presence of piezoelectricity at the nanoscale, as confirmed by piezoelectric force microscopy. This work also comments on the advantages and the challenges of the approach. Potentially, the novel approach opens a viable path for the development of the AlN‐based heterogeneous integration and future novel electronics and optoelectronics.

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Section: Resultsmentioning

confidence: 99%

Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes

Gong

Jie

Wang

et al. 2023

Adv Elect Materials

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“…Despite the high dislocation density within the GaN epilayer, the majority (>85%) of the nanowires feature nearly perfect crystallinity, indicating a filtering effect of the nanowire structure on propagating dislocations 40 . The threading dislocation density (TDD) within the GaN film is measured to be ~3 × 10 10 cm −2 41 . The TDs are observed to terminate on the sidewall of the nanowires, as shown in the cross-sectional scanning transmission electron microscopy (STEM) image (Fig.…”

Section: Resultsmentioning

confidence: 99%

InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering

Xiao

Navid

et al. 2022

Light Sci Appl

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Micro or submicron scale light-emitting diodes (µLEDs) have been extensively studied recently as the next-generation display technology. It is desired that µLEDs exhibit high stability and efficiency, submicron pixel size, and potential monolithic integration with Si-based complementary metal-oxide-semiconductor (CMOS) electronics. Achieving such µLEDs, however, has remained a daunting challenge. The polar nature of III-nitrides causes severe wavelength/color instability with varying carrier concentrations in the active region. The etching-induced surface damages and poor material quality of high indium composition InGaN quantum wells (QWs) severely deteriorate the performance of µLEDs, particularly those emitting in the green/red wavelength. Here we report, for the first time, µLEDs grown directly on Si with submicron lateral dimensions. The µLEDs feature ultra-stable, bright green emission with negligible quantum-confined Stark effect (QCSE). Detailed elemental mapping and numerical calculations show that the QCSE is screened by introducing polarization doping in the active region, which consists of InGaN/AlGaN QWs surrounded by an AlGaN/GaN shell with a negative Al composition gradient along the c-axis. In comparison with conventional GaN barriers, AlGaN barriers are shown to effectively compensate for the tensile strain within the active region, which significantly reduces the strain distribution and results in enhanced indium incorporation without compromising the material quality. This study provides new insights and a viable path for the design, fabrication, and integration of high-performance µLEDs on Si for a broad range of applications in on-chip optical communication and emerging augmented reality/mixed reality devices, and so on.

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“…At the AlN growth temperature of 980 °C, there could be a high Si concentration in the Al−Si eutectic. 38 As a consequence, the incorporation of Si atoms during the subsequent AlN growth results in an Al-Si-N interlayer formation, 44 which severely deteriorates the crystalline quality of the AlN layer. In contrast, the USAP conditions actually create a very weak supersaturated environment and prevent the formation of Al droplets and thus the Al−Si alloying during the TMAl pretreatment.…”

Section: Resultsmentioning

confidence: 99%

Ultralow-Supersaturation Al Pretreatment toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

Cai

Yang

et al. 2022

ACS Appl. Electron. Mater.

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An ultralow-supersaturation Al pretreatment approach has been proposed to achieve low threading dislocation (TD) density and low radio frequency (RF) loss GaN/AlN layer stacks on Si substrates. By employing this approach, the Al–Si liquid alloy is eliminated, and a sharp AlN/Si interface is obtained. In addition, the size of the AlN nucleation islands is enlarged and thus the TDs generated from the coalescence of the islands are reduced even at a low growth temperature. Owing to the low TD density AlN layer, a 1.5 μm crack-free GaN layer can be achieved directly on this AlN layer and no transition layers are required. The full width at half maximum values are as low as 390 and 440 arcsec for the GaN (002) and (102) diffractions, respectively. Owing to a low growth temperature and short growth time, the RF loss of the epi-stack is as low as 0.29 dB/mm at 10 GHz. This work shows great potential for the fabrication of high-quality and low-loss GaN-on-Si RF devices.

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Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111)

Cited by 20 publications

References 54 publications

Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes

Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes

InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering

Ultralow-Supersaturation Al Pretreatment toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

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