Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes

Abstract

Single‐crystalline inorganic semiconductor nanomembranes (NMs) have attracted great attention over the last decade, which poses great advantages to complex device integration. Applications in heterogeneous electronics and flexible electronics have been demonstrated with various semiconductor nanomembranes. Single‐crystalline aluminum nitride (AlN), as an ultrawide‐bandgap semiconductor with great potential in applications such as high‐power electronics has not been demonstrated in its NM forms. This very first report demonstrates the creation, transfer‐printing, and characteristics of the high‐quality single‐crystalline AlN NMs. This work successfully transfers the AlN NMs onto various foreign substrates. The crystalline quality of the NMs has been characterized by a broad range of techniques before and after the transfer‐printing and no degradation in crystal quality has been observed. Interestingly, a partial relaxation of the tensile stress has been observed when comparing the original as‐grown AlN epi and the transferred AlN NMs. In addition, the transferred AlN NMs exhibits the presence of piezoelectricity at the nanoscale, as confirmed by piezoelectric force microscopy. This work also comments on the advantages and the challenges of the approach. Potentially, the novel approach opens a viable path for the development of the AlN‐based heterogeneous integration and future novel electronics and optoelectronics.

Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

“…Overall, combining the discussion from this work with our previous studies, 43,45,61 the charge compensation phenomenon observed on the Ga-polar GaN surface can be a mixture of multiple effects.…”

“…The uncertainty of qψ S values was estimated to be 0.09 eV by the same method from our previous work. [43][44][45] Because of the strong distortion of the GaN valence band spectra from O 2 plasma, the qf S,GaN and surface bandbending values of the treated samples C and D were calculated by linear fitting around the VBM with a Gaussian broadening uncertainty of 0.2 eV 61 (Fig. S3 in the supplementary material).…”

Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes

“…the Si and the β-Ga2O3. The role of the interface SiGaOx has served the identical roles in other grafted heterostructures where an ultrathin Al2O3 layer was applied using atomic layer deposition (ALD) [45,[54][55][56][57][58][59][60][61]. surface conditions.…”

Intramolecularly Stabilized o-Carboranyl Aluminum Complexes: Synthesis, Characterization, and X-ray Structural Studies

“…Various organoaluminum compounds with C,N-chelating ligands have been prepared for the purpose of bonding to aluminum atoms via Al-C covalent bonds and Al-N dative bonds [2][3][4][5][6][7][8][9][10][11][12]. Recently, interest in aluminum nitride (AlN) [13], a form in which aluminum and nitrogen are combined, has been on the rise due to AlN being one of the few materials with both a wide direct bandgap and large thermal conductivity [14][15][16][17][18][19][20]. Group 13 metal nitrides are commonly used in optoelectronics [21][22][23][24][25][26], as well as in high-power and high-frequency electronics [27][28][29][30][31], owing to their small atomic mass, strong interatomic bonds, and simple crystal structure [32].…”