N. F. MOTT, E. A. DAVIS. Electronic Processes in Non‐Crystalline Materials Clarendon‐Press, Oxford 1971 437 Seiten. £ 7,50

Lösche, A.

doi:10.1002/crat.19720070420

Cited by 41 publications

(16 citation statements)

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“…An important feature of the luminescence spectrum is that the position of the luminescence maximum is close to the center of the band gap (as determined by the position of optical absorption edge [8]). This is well illustrated by the model of Mott and Davis [9] stating that a band of localized states (several tenths of eV wide) is located in the center of the band gap of chalcogenide glass semiconductors. Optical transitions of electrons into this band can cause luminescence with the energy of light quanta close to the half-width of the band gap.…”

Section: Photoluminescence In Chalcogenide Glassesmentioning

confidence: 62%

Mechanism of Photoluminescence in Erbium-Doped Chalcogenide

Halyan¹,

Ivashchenko²

2020

Luminescence - OLED Technology and Applications

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The monograph describes the technique of the synthesis of glasses and the method of the growth of erbium-doped single crystals. The photoluminescence spectra of Ag 0.05 Ga 0.05 Ge 0.95 S 2-Er 2 S 3 glasses and glasses from the Ga 2 S 3-La 2 S 3-Er 2 S 3 system have been investigated in the visible and near-infrared ranges. According to the energy transitions in the erbium ions, a radiation mechanism for conversion and up-conversion luminescence has been established. The role of structural ordering and the influence of defects on the radiation efficiency of Er 3+ ions have been investigated. The spectra of photoluminescence of (Ga 54.59 In 44.66 Er 0.75) 2 S 300 and (Ga 69.75 La 29.75 Er 0.5) 2 S 300 single crystals have been studied. The efficiency of the radiation of the amorphous and crystalline materials has been compared. Also, the temperature dependence of the integral intensity of the radiation of glasses and single crystals has been studied. It is established that in a limited temperature range, these materials can be used for the manufacture of non-contact optical thermosensors.

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Section: Photoluminescence In Chalcogenide Glassesmentioning

confidence: 62%

Mechanism of Photoluminescence in Erbium-Doped Chalcogenide

Halyan¹,

Ivashchenko²

2020

Luminescence - OLED Technology and Applications

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“…The conduction current I r can be theoretically estimated through the Hopping model (eq ). Among the bulk‐limited conduction mechanisms, this model mainly considers the hopping conduction as the dominant conduction mechanism in polar dielectric polymers:

{i_{normalr} \approx i}_{normalh normalo normalp normalp normali normaln normalg} = i_{0} normalexp (|, \frac{- E_{normala}}{k T}) normals normali normaln h (|, \frac{q a E}{2 k T})

where, E a is the conduction mechanism activation energy related to the average trap depth, k and T are the Boltzmann constant and the temperature, respectively, q is the charge carrier constant, a is the average trap distance, and E is the external applied electric field.…”

Section: Resultsmentioning

confidence: 99%

Processing optimization: A way to improve the ionic conductivity and dielectric loss of electroactive polymers

Pedroli

Marrani

et al. 2018

J Polym Sci B Polym Phys

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Electro‐active polymers (EAPs) such as P(VDF‐TrFE‐CTFE) are greatly promising in the field of flexible sensors and actuators, but their low dielectric strength driven by ionic conductivity is a main concern for achieving high electrostrictive performance. It is well known that there is a quadratic dependence of the strain response and mechanical energy density on the applied electric field. This dependence highlights the importance of improving the electrical breakdown EAPs while reducing the dielectric losses. This article demonstrates that it is possible to dramatically increase the electrical breakdown and decrease the dielectric losses by controlling processing parameters of the polymer synthesis and fabrication procedure. As a result, an enhancement of around 70% is achieved in both the strain and blocking force. The effects on the dielectric losses of the polymer crystallinity, molecular weight, solvent purity, and crystallization temperature are also investigated. © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2018, 56, 1164–1173

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“…The blue slope of Fig. 7 described the conduction (or leakage) current that can be estimated based on the following Hopping model: 46,47…”

Section: Morphological Characterizationmentioning

confidence: 99%

Reducing leakage current and dielectric losses of electroactive polymers through electro-annealing for high-voltage actuation

Pedroli

Marrani

et al. 2019

RSC Adv.

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N. F. MOTT, E. A. DAVIS. Electronic Processes in Non‐Crystalline Materials Clarendon‐Press, Oxford 1971 437 Seiten. £ 7,50

Cited by 41 publications

References 0 publications

Mechanism of Photoluminescence in Erbium-Doped Chalcogenide

Mechanism of Photoluminescence in Erbium-Doped Chalcogenide

Processing optimization: A way to improve the ionic conductivity and dielectric loss of electroactive polymers

Reducing leakage current and dielectric losses of electroactive polymers through electro-annealing for high-voltage actuation

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