n + -doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metal

Abstract

The feasibility of using CuMg as source/drain metal electrodes for n+-doped-layer-free microcrystalline silicon thin film transistors (μ-Si:H TFTs) has been investigated. The Ohmic-contact characteristic has been achieved by using the CuMg alloy as source/drain metal. Furthermore, a wet etching process of Cu alloy source/drain metal has been completed by using the ferric chloride base etchant. The proposed μ-Si:H TFT has shown similar electrical characteristic with the μ-Si:H TFT with n+-doped layer. The experimental result also showed that the CuMg alloy was suitable for the replacement of n+-doped layer in thin film transistor liquid-crystal displays.

n+-Doped-layer free amorphous silicon thin film solar cells fabricated with the CuMg alloy as back contact metal

“…Copper metallization has been receiving increasing attention in both microelectronics [8][9][10][11][12] and large-area electronics, because RC time delay can be reduced considerably by employing the low electrical resistivity metallurgy.…”