n-channel MOS transistors in mercury—cadmium—telluride

Kolodny, Avinoam; Shacham‐Diamand, Yosi; Kidron, I.

doi:10.1109/t-ed.1980.19904

Cited by 19 publications

(4 citation statements)

References 7 publications

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“…Kolodny et al 40,41 were the first in Israel to report the use of the damage-induced n-type conversion caused by ion implantation to fabricate devices within p-type HgCdTe (although with x~0.3). They showed 40 that the maximum doping concentration due to the B + ion implantation (100 keV, 10 13 to 5×10 14 cm -2 ) was ~10 18 cm -3 at 77K, and that the electrical concentration profile spread sometimes by as much as a factor of 10 deeper than the depth profile of the implanted ions.…”

Section: Junction Formationmentioning

confidence: 99%

Thirty years of HgCdTe technology in Israel

Weiss

2009

SPIE Proceedings

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The study of HgCdTe technology in Israel began in the mid 1970's under the leadership of the late Prof. Kidron and his group at the Technion, Israel Institute of Technology. The R&D efforts were continued by other groups at the Technion and other universities and research institutes in Israel, as well as by SCD. Many aspects of the technology of this material were studied, including both bulk crystal and epitaxial growths and microelectronic fabrication methods, with an emphasis on surface treatment and passivation. Various characterization methods were developed to study both the basic and applied material and device properties. The efforts, reviewed in this article, matured at SCD as it commercialized the HgCdTe technology, launching large-volume production lines of state-of-the-art linear and multi-linear TDI LWIR detector arrays of various sizes from 10×1 to 480×6 elements. Over the years, SCD has supplied its customers with thousands of both photoconductive (PC) and photovoltaic (PV) detectors, which are briefly presented in the paper.

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Section: Junction Formationmentioning

confidence: 99%

Thirty years of HgCdTe technology in Israel

Weiss

2009

SPIE Proceedings

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“…Junction formation takes place irrespective of the valency of the bombarding ions 17,18 . Elements such as H, Hg, Al, Be, B and In are used as implant species for making n+-on-p photodiodes.…”

Section: Ion Implantationmentioning

confidence: 99%

“…Following the implant, HgCdTe is annealed at a low temperature. During anneal, the Hg interstitials are released from the damage region and diffuse into the bulk HgCdTe 17,18,19 . The interstitials annihilate Hg vacancies and/or exchange places with dopants on the cation sublattice, creating mobile dopant interstitials.…”

Section: Ion Implantationmentioning

confidence: 99%

Ion Beam Based Techniques for Mercury Cadmium Telluride Infrared Detectors

Pal¹,

Mittal²,

Sharma³

et al. 2009

DSJ

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The paper reviews the applications of ion beam-based techniques such as ion implantation and ion beam milling, for HgCdTe detector fabrication. Fabrication of large-format arrays and two-color arrays necessitate the use of dry processes. Ion irradiation causes type conversion in HgCdTe. The type conversion is far beyond the damage sites because of Hg in-diffusion to interstitial sites. The dry processes combine high anisotropy, faster etch rates, and better dimensional control, than wet etch processes, but require the damaged region to be removed.

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“…A second, outer concentric gate is often employed to isolate the gd from the surface beyond the inner gate [115]. A gated diode is also formed by the gate and one source/drain region of a misfet [131], though it is preferred that the gate completely surround the junction.…”

Section: Mini or Lithographic Hall Effect Test Structures Hallmentioning

confidence: 99%

Improved characterization and evaluation measurements for HgCdTe detector materials, processes, and devices used on the GOES and TIROS satelites

Seiler¹,

Lowney²,

Thurber³

et al. 1994

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Improved Characterization and Evaluation Measurements for HgCdTe Detector Materials, Processes, and Devices Used on the GOES and TIROS Satellites U57 NO.^00-91 199^1 7he National Institute of Standards and Technology was established in 1988 by Congress to "assist industry in the development of technology . . . needed to improve product quality, to modernize manufacturing processes, to ensure product reliability . . . and to facilitate rapid commercialization ... of products based on new scientific discoveries."NIST, originally founded as the National Bureau of Standards in 1901, works to strengthen U.S. industry's competitiveness; advance science and engineering; and improve public health, safety, and the environment. One of the agency's basic functions is to develop, maintain, and retain custody of the national standards of measurement, and provide the means and methods for comparing standards used in science, engineering, manufacturing, commerce, industry, and education with the standards adopted or recognized by the Federal Government.

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n-channel MOS transistors in mercury—cadmium—telluride

Cited by 19 publications

References 7 publications

Thirty years of HgCdTe technology in Israel

Thirty years of HgCdTe technology in Israel

Ion Beam Based Techniques for Mercury Cadmium Telluride Infrared Detectors

Improved characterization and evaluation measurements for HgCdTe detector materials, processes, and devices used on the GOES and TIROS satelites

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