N-Channel MNOS EAROM for TV Electronic Tuning System

Abstract

A new n-channel MNOS technology for EAROM applications has been developed by introducing a threshold voltage control technique. The technology is principally based on a low energy implantation of boron ions for obtaining a positive center voltage in the threshold window, which results in better retentivity. By incorporating this MNOS technology and n-well CMOS technology on an isolated epitaxial layer, an n-channel MNOS EAROM is fabricated for TV electronic tuning system. The EAROM utilizes the two MNOS transistors per cell configuration. The device showed a long data retention time over 10 years at 80 °C after 105 erasing/writing cycles, therefore the technology appears to be quite promising for EAROM applications.

To the Kinetics of Nitrogen Incorporation during dc Magnetron Deposition

“…originating from the N i ions striking the target can be converted into a corresponding particle flux dZ;,/dt The partial current dZG2/dr = I;,/e (7) where e is the unity charge.…”