MWIR InAs&amp;lt;sub&amp;gt;1-x&amp;lt;/sub&amp;gt;Sb&amp;lt;sub&amp;gt;x&amp;lt;/sub&amp;gt; nCBn detectors data and analysis

D'Souza, Arvind I.; Robinson, E.; Ionescu, A; Okerlund, D.; Lyon, T. J. de; Rajavel, R. D.; Sharifi, Hasan; Yap, D.; Dhar, Nibir K.; Wijewarnasuriya, P. S.; Grein, C. H.

doi:10.1117/12.920495

Cited by 11 publications

(6 citation statements)

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“…41 Utilization of InAsSb absorber on GaAs substrates instead of HgCdTe absorber enables fabrication of MWIR low-cost, large-format HOT FPAs. Souza and co-workers [42][43][44] The measured dark current density in the pyramidal structured diodes is reduced by a factor of 3 in comparison with conventional diodes with the bulk absorber, which is consistent with volume reduction due to the creation of the absorber topology. High detectivity (>10 10 cmHz 1/2 /W) and high internal quantum efficiency (>90%) have been achieved over the entire 0.5 lm to 5.0 lm spectral range.…”

Section: Photon Trapping Detectorssupporting

confidence: 68%

“…Photon trapping detectors have been demonstrated independently in II-VI 38,39,41 and III-V [41][42][43][44] based epitaxial materials. Sub-wavelength in size semiconductor pillar arrays within a single detector have been designed and structured as an ensemble of 3D photonic structure units using either a top-down or bottom-up process scheme to significantly increase absorption and quantum efficiency.…”

Section: Photon Trapping Detectorsmentioning

confidence: 99%

“…The sub-element architecture can be of different shapes such as pyramidal, sinusoidal, or rectangular. 42 For example, Fig. 18 shows the photon trap structures with pillars and holes of varying volume fill factors.…”

Section: Photon Trapping Detectorsmentioning

confidence: 99%

See 2 more Smart Citations

New concepts in infrared photodetector designs

Martyniuk

Antoszewski

Martyniuk

et al. 2014

Applied Physics Reviews

234

134

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Section: Photon Trapping Detectorssupporting

confidence: 68%

Section: Photon Trapping Detectorsmentioning

confidence: 99%

See 1 more Smart Citation

New concepts in infrared photodetector designs

Martyniuk

Antoszewski

Martyniuk

et al. 2014

Applied Physics Reviews

234

134

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“…The modelled trends are observed in measured devices. PT detectors have been demonstrated independently in II-VI [79][80][81] and III-V [81][82][83][84] based materials. Subwavelength semiconductor pillar arrays within a single detector have been designed and structured as an assembly of 3D photonic structure units using a top-down or bottom-up pro-cess scheme to significantly enhance absorption and quantum efficiency.…”

Section: Trapping Photodetectorsmentioning

confidence: 99%

“…Subwavelength semiconductor pillar arrays within a single detector have been designed and structured as an assembly of 3D photonic structure units using a top-down or bottom-up pro-cess scheme to significantly enhance absorption and quantum efficiency. The sub-element architectures have different shapes such as pyramidal, sinusoidal or rectangular [82]. For example, figure 42 shows photon trap structures with pillars and holes and different volume FF.…”

Section: Trapping Photodetectorsmentioning

confidence: 99%

Scaling infrared detectors—status and outlook

Rogalski

2022

Rep. Prog. Phys.

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The predicted “Law 19” benchmark for HgCdTe photodiode performance established in 2019 is a milestone in the development of infrared detectors and make the dream of Elliott and colleagues, who in 1999 wrote that there is no fundamental obstacle to obtaining room temperature operation of photon detectors at room temperature with background-limited performance even in reduced fields of view [C.T. Elliott et al., Appl. Phys. Lett. 74(9), 2881 (1999)]. This circumstance will make it possible to achieve in the near future the room-temperature infrared (IR) arrays operation with high pixel density (small pixels) fully compatible with the background and diffraction-limited performance resulting from the system optics. The advent of smaller pixels also results in superior spatial and temperature resolutions of imaging systems. In megapixel imaging systems, the pixel dimension plays a crucial role in determining critical system attributes such as system size, weight, and power consumption (SWaP). In the paper, the physical limitations of pixel size related to the aperture of the optics, which in turn is wavelength dependent, are described. Since the critical parameter of small pixels is quantum efficiency, more attention has been paid to enhancing the coupling of radiation to the detector. Then, the evaluation for assessing the figure-of-merit of different material systems (especially short wavelength IR colloidal quantum dots, both medium and long wavelength IR novel III-V material systems) relative to bulk HgCdTe alloys is considered. Of the various thermal detectors, particular attention has been focused on bolometer arrays due to their largest share of the global commercial market. Also key challenges in realizing ultimate pixel dimensions in focal plane arrays (FPAs) design are presented for different material systems including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity.

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III–VSemiconductors for Infrared Detectors

Asahi

Horíkoshi²

2019

Molecular Beam Epitaxy

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MWIR InAs<sub>1-x</sub>Sb<sub>x</sub> nCBn detectors data and analysis

Cited by 11 publications

References 0 publications

New concepts in infrared photodetector designs

New concepts in infrared photodetector designs

Scaling infrared detectors—status and outlook

III–VSemiconductors for Infrared Detectors

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