MWIR and LWIR detectors based on HgCdTe/CdZnTe/GaAs heterostructures

Dvoretsky, S. A.; Варавин, В. С.; Михайлов, Н. Н.; Sidorov, Yuri G.; Zakhar'yash, T. I.; Vasiliev, V. V.; Ovsyuk, V. N.; Chekanova, Galina V.; Nikitin, Mikhail S.; Lartsev, Ivan Yu.; Aseev, A. L.

doi:10.1117/12.624912

Cited by 10 publications

(3 citation statements)

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“…Further, the n−type conduc− tivity absorber layer of the composition 0.22 and 6-8 μm thick was grown. For passivation at the absorber surface, the graded wide gap layer with 0.4−mm thickness and the final composi− tion 0.4 was grown [2]. The procedure of thermal annealing converted absorber to p−type conductivity.…”

Section: Resultsmentioning

confidence: 99%

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320×256 HgCdTe IR FPA with a built-in shortwave cut-off filter

Vasilyev

Варавин

Dvoretsky

et al. 2010

Opto-Electronics Review

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A photovoltaic detector design based on the graded band gap HgCdTe MBE structure with high conductivity layer (HCL) at interface, which provides photodiodes series resistance and a shortwave cut.off filter is developed. The optimal HCL parameters giving high quantum efficiency and minimal noise equivalent temperature difference were determined by calculations and experimentally confirmed. The hybrid 320×256 IR FPA operating in 8–12 μm spectral range was fabricated. The threshold power responsivity and minimal noise equivalent temperature difference values at wavelength maximum were 1.02×10−7 W/cm2, 4.1×108 V/W and 27 mK, respectively.

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Section: Resultsmentioning

confidence: 99%

“…It is possible to decrease dark current by decreasing or elimination of surface leakage cur− rents creating graded wide gap layers at the HgCdTe inter− face and the surface [2]. The series resistance R s can be de− creased introducing a high conductivity layer at HgCdTe in− terface.…”

Section: Introductionmentioning

confidence: 99%

320×256 HgCdTe IR FPA with a built-in shortwave cut-off filter

Vasilyev

Варавин

Dvoretsky

et al. 2010

Opto-Electronics Review

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“…2 shows the composition distribution throughout the thickness measured by ellipsometry in situ. Such graded wide gap layers help to increase minority lifetime [15,16] and to decrease or eliminate surface leakage [17] in PV FPA.…”

Section: Methodsmentioning

confidence: 99%

HgCdTe nanostructures on GaAs and Si substrate for IR and THz radiation detecting

Yakushev¹,

Варавин

Васильев

et al. 2012

J. Phys.: Conf. Ser.

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Abstract. All-round studies of heteroepitaxial HgCdTe nanostructures (NS) growth on GaAs and Si substrates by molecular beam epitaxy have been carried out. In case of Si substrate HgCdTe NS's is very perspectives for IR detectors because of equal thermal expention coefficient with silicon read-out circuits. The problems of HgCdTe conjugations with Si at epitaxy connected with large differences in lattice mismatch and differences in chemical bonding that leads to antiphased domains. We found that the precise formation of transition layer (2 nm in thickness between Si substrates and first ZnTe buffer layer leads to growth HgCdTe NS's without antiphrasis domains. V-defects and etch pits densities are equal to 10 3 cm -2 and 10 7 cm -2 respectively. The HgCdTe/Si were used for fabrication photovoltaic 640×512 MWIR focal plane arrays. The operability for 1/2 = 4.2 m (77К) was over 97%. The response (Sv) and NETD were as 1,5×10 9 V/W and less 20 mK respectively. We developed the precise growth of symmetric and antisymmetric HgTe QW. We found the following effects: the presence 2D electron gas with high mobilities over 5×10 5 cm/V×s in doped HgTe QW, the presence @D holes and electrons in undoped HgTe QW and high sensitivity to linear and circular polarized IR and THz radiation in 6 -400 m region.

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