Multiwavelength InGaAs/InGaAsP strained-layer MQW-laser array using shadow-masked growth

<title>Semiconductor lasers for wavelength division multiplexing systems</title>

“…Selective area growth using shadow masks has also been carried out to obtain variations in epilayer thickness (to a lesser extent, in composition) on a single device wafer [12]. In combination with an MQW active region, this approach gives the desired bandgap variations (or optical gain peaks).…”

Bridge Mask Growth Using Organomtallic Vapor Phase Epitaxy

“…We have successfully achieved a reduction in the growth rate and an energy band gap shift in multi-quantumwell structure using this technique. There are several epitaxial growth techniques for the integration of optical devices, i.e., butt coupling, 1) selective area growth (SAG), 2) epitaxial shadow mask growth (SMG), 3) and silicon shadow mask growth (Si-SMG). 4,5) Although butt coupling is a widely used epitaxial growth technique for device integration, in some cases, the imperfection of crystallinity at the butt coupling interface causes severe problems in device integration.…”

Growth characteristics of InP in bridged mask growth using organo-metallic vapor phase epitaxy

“…However, an abrupt change of growth character- istics in a few micrometers is not feasible in this method [6]. There are two kinds of SMG methods, in which growth rates in the SMG region are reduced, compared with those far from the SMG pattern; one uses a trench with a continuous opening [7], while the other uses a remote mask apart from the surface of semiconductor wafer [8].…”