Bridge Mask Growth Using Organomtallic Vapor Phase Epitaxy

Abstract

For the area-dependent epitaxial growth, we propose a new epitaxial growth technique named the bridge mask growth. In this method, growth characteristics are controlled by spatial dimensions such as SiN x bridge width and the gap distance between SiN x bridges. We have successfully achieved a reduction in the growth rate and an energy band gap shift in multi-quantum-well structure using this technique.