Multistage performance deterioration in n-type crystalline silicon photovoltaic modules undergoing potential-induced degradation

Komatsu, Yutaka; Yamaguchi, Seira; Masuda, Atsushi; Ohdaira, Keisuke

doi:10.1016/j.microrel.2018.03.018

Cited by 29 publications

(79 citation statements)

References 24 publications

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“…This section presents a description of three‐stage degradation [ 20 ] as an example in which PID stress leads to several kinds of degradation. The PID of n‐type PERT cells includes all the degradation mechanisms reviewed in this article: polarization‐type PID, Na‐penetration‐type PID, and corrosion‐type PID.…”

Section: Degradation In N‐type Pert Cell Modules: Examples Of Three Degradation Mechanismsmentioning

confidence: 99%

“…First‐stage degradation is characterized by reductions in J sc / J sc,0 and V oc / V oc,0 . [ 16,17,19,20 ] The PID is known to occur in a remarkably short time. For example, this PID starts to occur within several seconds and begins to saturate within a minute in PID tests with −1000 V at 85 °C.…”

Section: Degradation In N‐type Pert Cell Modules: Examples Of Three Degradation Mechanismsmentioning

confidence: 99%

“…After the polarization‐type PID, the modules show second‐stage degradation, which is characterized by reduction in FF/FF 0 . [ 18,20 ] This PID appears after PID stressing for a longer time than that of the polarization‐type PID. Such PID has no particular name, but this PID can be regarded as related to Na penetration.…”

Section: Degradation In N‐type Pert Cell Modules: Examples Of Three Degradation Mechanismsmentioning

confidence: 99%

“…Research undertaken to investigate PID in n‐type c‐Si PV modules has gradually become active since around 2015. Some reports have described PID in PV modules fabricated from n‐type c‐Si cells, such as passivated emitter and rear totally diffused (PERT) cells, [ 16–30 ] passivated emitter and rear locally diffused (PERL) cells, [ 31 ] TOPCon cells, [ 32 ] rear‐emitter c‐Si PERT cells (with the junction not at the front‐glass side), [ 18,33,34 ] IBC cells, [ 15,35–39 ] and Si heterojunction (SHJ) cells. [ 40–43 ] According to these many studies, n‐type c‐Si PV cell modules show PID with different mechanisms from those in p‐type cells.…”

Section: Introductionmentioning

confidence: 99%

“…For instance, n‐type front‐emitter PERT cells are known to exhibit three types of PID: polarization‐type PID; PID because of Na penetration, known as Na‐penetration‐type PID; and corrosion‐type PID. [ 20 ] These examples are important because they demonstrate that n‐type cell modules can undergo PID of several types occurring by different mechanisms. Also, SHJ cells, which have transparent conductive oxide layers as top surfaces, are reported to be adversely affected mainly by corrosion‐type PID and to be resistant to other types of PID.…”

Section: Introductionmentioning

confidence: 99%

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Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

et al. 2021

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n‐Type crystalline‐silicon (c‐Si) photovoltaic (PV) cell modules attract attention because of their potential for achieving high efficiencies. The market share of n‐type c‐Si PV modules is expected to increase considerably, with wide use in PV systems, including large‐scale PV systems, for which the system bias is set as markedly high. Such a high system bias leads to performance losses known as potential‐induced degradation (PID). By virtue of many researchers’ efforts, the PID behaviors, mechanisms, and preventive measures against PID have been well documented in conventional p‐type c‐Si modules. Researchers recently started to investigate PID in high‐efficiency c‐Si solar cells including n‐type c‐Si PV modules. Yet, the understanding of PID phenomena remains incomplete. Herein, a literature review of PID in high‐efficiency n‐type c‐Si PV modules is provided as a resource elucidating the current status of related research and remaining unresolved issues. This report mainly presents discussion of PID in several kinds of n‐type c‐Si PV modules in terms of materials science. PID phenomena are described as divided into some degradation modes. Details present a review of their respective degradation modes, degradation behaviors, proposed mechanisms, and potential measures against degradation. Remaining open issues and anticipated future studies are also summarized.

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Section: Degradation In N‐type Pert Cell Modules: Examples Of Three Degradation Mechanismsmentioning

confidence: 99%

Section: Degradation In N‐type Pert Cell Modules: Examples Of Three Degradation Mechanismsmentioning

confidence: 99%

Section: Degradation In N‐type Pert Cell Modules: Examples Of Three Degradation Mechanismsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

et al. 2021

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Mechanistic Understanding of Polarization‐Type Potential‐Induced Degradation in Crystalline‐Silicon Photovoltaic Cell Modules

Yamaguchi

Masuda

Marumoto

et al. 2022

Adv Energy and Sustain Res

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Potential‐induced degradation (PID) has been identified as a central reliability issue of photovoltaic (PV) cell modules. Several types of PID depend on the cell structure. Among those types, polarization‐type PID, which is characterized by reductions in short‐circuit current density (JSC) and open‐circuit voltage (VOC), is the fastest PID mode. Additionally, polarization‐type PID occurs readily at room temperature or at markedly low magnitudes of electric potential difference. Therefore, polarization‐type PID is a severe difficulty affecting silicon PV modules. Recently, degradation behavior, preventive measures, and mechanism have been investigated. As described herein, mechanistic aspects of polarization‐type PID are specifically examined and details of a recently proposed model involving a charge accumulation process at K centers in SiNx dielectric layers: the K‐center model are discussed. The K‐center model consistently explains previously reported results of experimentation, which indicates the validity of this model. Discussions presented herein are expected to improve the mechanistic understanding of polarization‐type PID in the PV community and to stimulate further discussions and verifications of the model.

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Review of Potential‐Induced Degradation in Bifacial Photovoltaic Modules

Molto

Mahmood

et al. 2023

Energy Tech

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Bifacial modules are increasingly deployed in the field and are expected to represent half of the market share within 10 years. Their rear structure differs from monofacial modules to allow additional light absorption. However, it brings new reliability challenges to address. In particular, the risk of potential‐induced degradation (PID) is increased as both module sides are impacted. Different PID processes have been identified in the literature: shunting type (PID‐s), polarization type (PID‐p), Na penetration type, and corrosion type (PID‐c). Their occurrence depends on the photovoltaic system configuration as well as the module's materials. Apart from PID‐s, PID processes are not well understood and extensive research is needed to elucidate the PID scenario and underlying mechanisms. Herein, current knowledge about PID processes and their impact on the main bifacial modules in the market are gathered with the aim to guide future research. Bifacial module technologies and leakage current paths leading to PID are described. Indoor and outdoor PID testing methods are detailed. For each bifacial module technology, the PID processes are investigated with their indicators, mechanism and recovery process. PID‐impacting factors and limitation solutions are finally reported and a state of the art on PID modeling is presented.

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Multistage performance deterioration in n-type crystalline silicon photovoltaic modules undergoing potential-induced degradation

Cited by 29 publications

References 24 publications

Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

Mechanistic Understanding of Polarization‐Type Potential‐Induced Degradation in Crystalline‐Silicon Photovoltaic Cell Modules

Review of Potential‐Induced Degradation in Bifacial Photovoltaic Modules

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