Review of Potential‐Induced Degradation in Bifacial Photovoltaic Modules

Molto, Cecile; Oh, Jaewon; Mahmood, F.; Li, Mengjie; Hacke, Peter; Li, Fang; Smith, Ryan; Colvin, Dylan J.; Matam, Manjunath; DiRubio, Christopher; TamizhMani, GovindaSamy; Seigneur, Hubert

doi:10.1002/ente.202200943

Cited by 16 publications

(19 citation statements)

References 167 publications

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“…Given the interplay of these mechanisms, addressing each one individually poses challenges. Recent research on bifacial PV modules has shown that multiple PID mechanisms coexist 21 . Furthermore, Na‐driven PID has also been reported in Cu(In,Ga)(Se,S) 2 (CIGS) thin‐film solar cells 22–29 and recently in perovskite solar cells 30–34 .…”

Section: Introductionmentioning

confidence: 92%

“…Recent research on bifacial PV modules has shown that multiple PID mechanisms coexist. 21 Furthermore, Na-driven PID has also been reported in Cu(In,Ga)(Se,S) 2 (CIGS) thin-film solar cells [22][23][24][25][26][27][28][29] and recently in perovskite solar cells. [30][31][32][33][34] Therefore, this study aims to investigate and mitigate the fundamental cause of Na ingress to address PID concerns.…”

Section: Introductionmentioning

confidence: 96%

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Prevention of potential‐induced degradation using a moisture barrier in crystalline silicon photovoltaic modules

Lee,

Bae

et al. 2024

Progress in Photovoltaics

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As photovoltaic (PV) modules are exposed to high temperatures and humidity over time, they generate leakage current, which leads to potential‐induced degradation (PID) and lower power output. In silicon, Cu(In,Ga)(Se,S)2 (CIGS) thin film and perovskite solar cells, PID has been shown to be driven by the presence of Na in the module glass. PID stability is crucial for the commercialization of such solar modules. This study aims to confirm the leaching phenomenon of Na in soda–lime module glass and study the use of polytetrafluoroethylene (PTFE) as a moisture barrier to prevent PID. By water immersion and exposure to different temperature and humidity conditions, we exhibited Na leaching in soda–lime glass. Moreover, we demonstrate the use of an anti‐PID moisture barrier made of PTFE, which was deposited using kinetic spraying between the cover glass and encapsulant in the solar module. The thickness of the moisture barrier was controlled by adjusting the deposition rate, and the PID characteristics were evaluated by manufacturing solar modules for different barrier thicknesses. Light current–voltage (LIV), dark current–voltage (DIV), and electroluminescence (EL) measurements confirmed that the PTFE moisture barrier effectively inhibits the degradation of solar cells. This study provides further insights into the Na leaching phenomenon and PID mechanism in PV modules and contributes to the design and development of more stable solar cells.

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Section: Introductionmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 96%

Prevention of potential‐induced degradation using a moisture barrier in crystalline silicon photovoltaic modules

Lee,

Bae

et al. 2024

Progress in Photovoltaics

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“…In previous studies, there has been a focus on the improvement of solar-cell materials to prevent PID [10,11], especially crystalline silicon solar cells [12,13]; thus, control of the base resistivity of materials is one of the methods to reduce PID. Earlier studies have pointed out that the PID problem can be effectively slowed down [14] when the base resistivity is higher.…”

Section: Basic Knowledge Related and Research Motivation Of The Studymentioning

confidence: 99%

Prevention of PID Phenomenon for Solar Panel Based on Mathematical Data Analysis Models

Chen,

Hung,

Lin

et al. 2023

Mathematics

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In recent years, the problem of potential-induced degradation (PID) phenomenon has been deeply associated with solar power issues because it causes serious power attenuation of solar panels and results in lowering its power generation efficiency. Thus, effectively identifying the PID problem from insights of industry data analysis to reduce production costs and increase the performance of power generation is an interesting and important subject for the solar power industry. Moreover, by the traditional standard rule (IEC62804) and the condition of a 96 h testing time, the costs of testing time and assembling materials against PID are very high and must be improved. Given the above reasons, this study proposes a hybrid procedure to organizes four mathematical methods: the mini-module testing, solar cell testing, a settling time, and a neural network, which are named as Method-1–Method-4, respectively, to efficiently solve the PID problem. Consequently, there are four key outcomes from the empirical results for solar power application: (1) In Method-1 with a 96 h testing time, it was found that the large module with higher costs and the mini module with lower costs have a positive correlation; thus, we can replace the large-module testing by the effective mini module for lower cost on module materials. (2) In Method-2 with a 24 h testing time, it was also found that the mini module and the solar cell are positively correlated; this result provides evidence that we can conduct the PID test by the easier solar cell to lower the costs. (3) In Method-3, the settling time achieves an average accuracy of 94% for PID prediction with a 14 h testing time. (4) In Method-4, the experimental result provides an accuracy of 80% when identifying the PID problem with the mathematical neural network model and are obtained within a 2 h testing time. From the above results, these methods succeed in reducing cost of materials and testing time during the manufacturing process; thus, this study has an industrial application value. Concurrently, Method-3 and Method-4 are rarely seen in the limited literature review for identifying PID problem; therefore, this study also offers a novel contribution for technical application innovation.

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“…Potential‐induced degradation (PID) occurs when charges migrate under an electric field associated with system voltage potential, accelerated by moisture and elevated temperature, leading to power loss and sometimes delamination in the module package. The reader is referred to several reviews in the literature for more information about the various degradation mechanisms of PID 1–3 . Polarization‐type PID (PID‐p) in Si cell technologies occurs when charge drifts within the passivating dielectric antireflective coating toward or away from the Si in such a way that it increasingly electrostatically attracts photogenerated carriers in the Si to the dielectric interface promoting their recombination, resulting in a loss of photocurrent and cell voltage 4,5 .…”

Section: Introductionmentioning

confidence: 99%

Field‐representative evaluation of PID‐polarization in TOPCon PV modules by accelerated stress testing

Hacke,

Spataru,

Habersberger

et al. 2024

Progress in Photovoltaics

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Potential‐induced degradation‐polarization (PID‐p) can reduce module power, but how to project the extent to which PID‐p may occur in field conditions considering the factors of system voltage, condensed moisture, temperature, and illumination has not been clarified. Using tunnel oxide passivated contact (TOPCon) modules, this work demonstrates a method to test full‐size crystalline silicon PV modules for PID‐p to provide field‐representative results. In initial screening tests with positive or negative 1000 V electrical bias applied at 60°C for 96 h using Al foil electrodes on the glass surfaces, the module type exhibited reversible PID‐p only on the front face when the cell circuit was in negative voltage potential. No PID was detected on the rear after testing in either polarity. We then evaluated the PID‐p sensitivity on the front side under different UV irradiances while maintaining the glass surface wet to estimate real‐world susceptibility to PID‐p. The magnitude of the observed behavior was fit using a previously developed charge transfer and depletion by light model. Whereas power loss with −1000 V applied to the cell circuit at 60°C for 96 h in the dark was about 30%, testing the module front under 0.051 W·m−2 nm−1 at 340 nm UVA irradiation using fluorescent tubes, the mean degradation was only 3%. When the modules were tested in the dark for PID‐p with in situ dark current–voltage (I‐V) characterization, the thermal activation energy for degradation was 0.71 eV; for recovery in the dark, it was 0.58 eV. Whereas recovery from the degraded state at 60°C in the dark without voltage bias was 5% absolute in 38 h, rapid recovery of about 5% absolute was observed with 1000 W·s/m2 exposure at 25°C using a flash tester.

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Review of Potential‐Induced Degradation in Bifacial Photovoltaic Modules

Cited by 16 publications

References 167 publications

Prevention of potential‐induced degradation using a moisture barrier in crystalline silicon photovoltaic modules

Prevention of potential‐induced degradation using a moisture barrier in crystalline silicon photovoltaic modules

Prevention of PID Phenomenon for Solar Panel Based on Mathematical Data Analysis Models

Field‐representative evaluation of PID‐polarization in TOPCon PV modules by accelerated stress testing

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