Multiscale approach for modeling EUV patterning of chemically amplified resist

Lee, Hyungwoo; Kim, Muyoung; Moon, Jin San; Park, Sung Woo; Lee, Byunghoon; Jeong, Chang-Young; Cho, Maenghyo

doi:10.1117/12.2514840

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…This model gives insight information about the chemical reactions (diffusion, quenching, deprotection etc.,) taking place during the structuring. Furthermore, it can predict the polymer loss during PEB as well as LER performance [63].…”

Section: Polymeric Systems Based On Hydrophilicity Changementioning

confidence: 99%

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

Manouras

Argitis

2020

Nanomaterials

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The need for decreasing semiconductor device critical dimensions at feature sizes below the 20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) lithography with exposure at 13.5 nm as the main next generation lithographic technology. The broad consensus on this direction has triggered a dramatic increase of interest on resist materials of high sensitivity especially designed for use in the EUV spectral region in order to meet the strict requirements needed for overcoming the source brightness issues and securing the cost efficiency of the technology. To this direction both fundamental studies on the radiation induced chemistry in this spectral area and a plethora of new ideas targeting at the design of new highly sensitive and top performing resists have been proposed. Besides the traditional areas of acid-catalyzed chemically amplified resists and the resists based on polymer backbone breaking new unconventional ideas have been proposed based on the insertion of metal compounds or compounds of other highly absorbing at EUV atoms in the resist formulations. These last developments are reviewed here. Since the effort targets to a new understanding of electron-induced chemical reactions that dominate the resist performance in this region these last developments may lead to unprecedented changes in lithographic technology but can also strongly affect other scientific areas where electron-induced chemistry plays a critical role.

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Section: Polymeric Systems Based On Hydrophilicity Changementioning

confidence: 99%

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

Manouras

Argitis

2020

Nanomaterials

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“…Rarely has the physical description of polymer chains and their movements been reported. Recently, Kim et al [25][26][27] studied the mechanism of photochemical reactions in an EUV photoresist matrix and the resulting pattern edge morphology with atomic molecular dynamics simulation, although time and length scales are relatively short and small due to the nature of the simulations. Ideally, EUV photoresist simulations should involve the modeling of relevant components, explicitly polymer chains and additives, with a good understanding of complex physical and chemical reaction occurring under the lithographic conditions, at dimension and time scales relevant for patterning.…”

Section: Introductionmentioning

confidence: 99%

Molecular Modeling of EUV Photoresist Revealing the Effect of Chain Conformation on Line-Edge Roughness Formation

et al. 2019

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Extreme ultraviolet lithography (EUVL) is a leading-edge technology for pattern miniaturization and the production of advanced electronic devices. One of the current critical challenges for further scaling down the technology is reducing the line-edge roughness (LER) of the final patterns while simultaneously maintaining high resolution and sensitivity. As the target sizes of features and LER become closer to the polymer size, polymer chain conformations and their distribution should be considered to understand the primary sources of LER. Here, we proposed a new approach of EUV photoresist modeling with an explicit description of polymer chains using a coarse-grained model. Our new simulation model demonstrated that interface variation represented by width and fluctuation at the edge of the pattern could be caused by characteristic changes of the resist material during the lithography processes. We determined the effect of polymer chain conformation on LER formation and how it finally contributed to LER formation with various resist material parameters (e.g., Flory–Huggins parameter, molecular weight, protected site ratio, and Tg).

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Exploiting the quantum mechanically derived force field for functional materials simulations

et al. 2021

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The computational design of functional materials relies heavily on large-scale atomistic simulations. Such simulations are often problematic for conventional classical force fields, which require tedious and time-consuming parameterization of interaction parameters. The problem can be solved using a quantum mechanically derived force field (QMDFF)—a system-specific force field derived directly from the first-principles calculations. We present a computational approach for atomistic simulations of complex molecular systems, which include the treatment of chemical reactions with the empirical valence bond approach. The accuracy of the QMDFF is verified by comparison with the experimental properties of liquid solvents. We illustrate the capabilities of our methodology to simulate functional materials in several case studies: chemical degradation of material in organic light-emitting diode (OLED), polymer chain packing, material morphology of organometallic photoresists. The presented methodology is fast, accurate, and highly automated, which allows its application in diverse areas of materials science.

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Multiscale approach for modeling EUV patterning of chemically amplified resist

Cited by 3 publications

References 5 publications

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

Molecular Modeling of EUV Photoresist Revealing the Effect of Chain Conformation on Line-Edge Roughness Formation

Exploiting the quantum mechanically derived force field for functional materials simulations

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