Multiply stripped ion generation in the metal vapor vacuum arc

Brown, Ian; Feinberg, B.; Galvin, James E.

doi:10.2172/5228893

Cited by 2 publications

(2 citation statements)

References 1 publication

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“…The MEVVA ion beam is relatively pure -ie, it contains ion species of only the cathode material -to better then 99%. The beam ions are in general multiply charged, and the charge state distribution has been studied in detail (22]. The measured charge state spectrum for a Cu ion beam is shown in Figure 2.…”

Section: Ion Implantationmentioning

confidence: 99%

Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

Brown

Rubin

et al. 1989

MRS Proc.

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We have used high-dose metal ion implantation to ‘fine tune’ the composition of Y-Ba- Cu-O thin films. The films were prepared by either of two rf sputtering systems. One system uses three modified Varian S-guns capable of sputtering various metal powder targets; the other uses reactive rf magnetron sputtering from a single mixed-oxide stoichiometric solid target. Film thickness was typically in the range 2000–5000 A. Substrates of magnesium oxide, zirconia-buffered silicon, and strontium titanate have been used. Ion implantation was carried out using a metal vapor vacuum arc (MEVVA) high current metal ion source. Beam energy was 100–200 keV, average beam current about 1 mA, and dose up to about 1017 ions/cm2. Samples were annealed at 800 – 900°C in wet oxygen. Film composition was determined using Rutherford Backscattering Spectrometry (RBS), and the resistivity versus temperature curves were obtained using a four-point probe method. We find that the zero-resistance temperature can be greatly increased after implantation and reannealing, and that the ion beam modification technique described here provides a powerful means for optimizing the thin film superconducting properties.

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Section: Ion Implantationmentioning

confidence: 99%

Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

Brown

Rubin

et al. 1989

MRS Proc.

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“…A similar combination of Ni + implantation and annealing enables change of optical properties of sapphire [25]. Implantation of Ni + was also used to modify structural, physical and chemical properties of polymers [26][27][28] One of the most useful method for high melting point metal ion beams is using the MEVVA (MEtal Vapor Vacuum Arc) ion sources [29,30]. Another effective and widely used method is MIVOC (Metal-Ions-from-VOlatile-Compounds) employing volatile (usually organic) compounds supplied as a feeding gas to the electron cyclotron ion source [31][32][33][34].…”

Section: Introductionmentioning

confidence: 99%

New Approach to Non-Volatile Metal Ion Production Using Plasma Ion Source with Internal Evaporator

Turek¹,

Droździel²,

Pyszniak³

et al. 2022

Adv. Sci. Technol. Res. J.

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A new approach to application the internal evaporator in an arc discharge ion source is presented, namely a crucible with a plug made of feeding substance. This solution is suitable especially for high-melting point metallic feeding substances. The ion source was tested using Ni and Cr. Basic ion source characteristics, i.e. dependences of ion current and discharge voltage on discharge and filament currents as well as on the external magnetic field flux density are shown and discussed in order to find optimal working conditions. The maximal ion currents were 18 mA for Ni + and 38 mA for Cr + . The stability of the ion current was also tested. It was proven that ion source is able to provide intense ion beam current long enough to perform irradiations with the fluence of ~5×10 15 cm -2 confirming the usefulness of the design for ion implantation purposes.

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Multiply stripped ion generation in the metal vapor vacuum arc

Cited by 2 publications

References 1 publication

Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

New Approach to Non-Volatile Metal Ion Production Using Plasma Ion Source with Internal Evaporator

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