Multiple-Vt Solutions in Nanosheet Technology for High Performance and Low Power Applications

Bao, Ruqiang; Vega, Reinaldo A.; Pancharatnam, S.; Jamison, P.; Wang, M.; Loubet, N.; Basker, Veeraraghavan; Dechene, Daniel J.; Guo, Dechao; Haran, B.; Bu, H.; Watanabe, Kôji; Khare, Mukesh; Zhang, J.; Guo, Jong-Ru; Zhou, Huimei; Gaul, Anny; Sankarapandian, M.; Li, J.; Hubbard, Alex

doi:10.1109/iedm19573.2019.8993480

Cited by 22 publications

(8 citation statements)

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“…Extension work to establish the precise device models for 3D devices such as Fin-FETs [30][31][32] or gate-all-around FETs [33,34] is still outstanding. Even though the device format is multi-nano-sheet (mNS) or multi-bridge-channel [16,[35][36][37], this concept of providing a great set of device models considering the contribution of the gate field is rather feasible. Of course, entering the 10-nm process or beyond, the current performance can be disturbed by quantum confinement effects [38][39][40].…”

Section: Discussionmentioning

confidence: 99%

Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields

Chao

Huang

et al. 2022

Crystals

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A novel channel mobility model with two-dimensional (2D) aspect is presented covering the effects of source/drain voltage (VDS) and gate voltage (VGS), and incorporating the drift and diffusion current on the surface channel at the nano-node level, at the 28-nm node. The effect of the diffusion current is satisfactory to describe the behavior of the drive current in nano-node MOSFETs under the operations of two-dimensional electrical fields. This breakthrough in the model’s establishment opens up the integrity of long-and-short channel devices. By introducing the variables VDS and VGS, the mixed drift and diffusion current model effectively and meaningfully demonstrates the drive current of MOSFETs under the operation of horizontal, vertical, or 2D electrical fields. When comparing the simulated and experimental consequences, the electrical performance is impressive. The error between the simulation and experiment is less than 0.3%, better than the empirical adjustment required to issue a set of drive current models.

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Section: Discussionmentioning

confidence: 99%

Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields

Chao

Huang

et al. 2022

Crystals

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“…The most remarkable difference from the LNS is that the thicker epitaxial growth of Si (TSi) is required than that of SiGe (TSiGe) for the formation of the channels [Fig. 3 Additionally, in FNS, the increase of width can be simply implemented by modulating the fin height for the enhanced current as contrast to LNS where it is difficult to increase the width of the nanosheet because it affects multi-Vth process margin by changing the space between nanosheets with different Vth or between NMOS and PMOS [16].…”

Section: Process Flowmentioning

confidence: 99%

Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application

Kim

Lee

et al. 2023

IEEE J. Electron Devices Soc.

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In this paper, floating fin structured vertically stacked nanosheet gate-all-around (GAA) metal oxide semiconductor field-effect transistor (FNS) is proposed for low power logic device applications. To verify the electrical performance of the proposed device, three-dimensional (3-D) technology computer-aided design (TCAD) device/circuit simulations are performed with calibrated device model parameters. As a result, it is found that gate propagation delay (τdelay) and dynamic power (Pdyn) are improved by 8% and 19%. respectively as compared to conventional vertically stacked lateral nanosheet (LNS). Through the rigorous analysis on the resistance and capacitance components of FNS and LNS, it is clearly revealed that the τdelay and Pdyn are improved at the same Pdyn (50 μW) and τdelay (187 GHz) by the reduced effective capacitance which results from the diminished gate-to-sorece/drain overlap area. Based on the TCAD simulation studies, it is expected that the FNS is suitable for next generation logic digital applications.

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“…The mean time to failure decreases as the temperature rises. A close working relationship with a multiple sheet foundry is required for advanced process nodes to meet the foundry's "sign-off" certification requirements using complex EM rules [19].…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of Nanosheet Field-Effect Transistor for High-Speed Switching Applications

Kumar

Kumar²,

Vijayalakshmi³

et al. 2023

Journal of Nanomaterials

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Self-heating effects and short channel effects are unappealing side effects of multigate devices like gate-all-around nanowire-field-effect transistors (FETs) and fin FETs, limiting their performance and posing reliability difficulties. This paper proposes the use of the novel nanosheet FET (NsFET) for complementary metal-oxide semiconductor technology nodes that are changing. Design guidelines and basic measurements for the sub-nm node are displayed alongside a brief introduction to the roadmap to the sub-nm regime and electronic market. The device had an ION/IOFF ratio of more than 105, according to the proposed silicon-based NsFET. For low-power and high-switching applications, the results were verified and achieved quite well. When an NS width increases, although, the threshold voltage (Vth) tends to fall, resulting in a loss in subthreshold effectiveness. Furthermore, the proposed device performance, like subthreshold swing ION/IOFF, was studied with a conventional 2D FET. Hence, the proposed NsFET can be a frontrunner for ultra-low power and high-speed switching applications.

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Multiple-Vt Solutions in Nanosheet Technology for High Performance and Low Power Applications

Cited by 22 publications

References 0 publications

Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields

Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields

Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application

Design and Analysis of Nanosheet Field-Effect Transistor for High-Speed Switching Applications

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