Multiple phonon overtones in ZnTe

Feng, Zhe Chuan; Perkowitz, Sidney; Becla, P.

doi:10.1016/0038-1098(91)90120-k

Cited by 16 publications

(3 citation statements)

References 18 publications

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“…The longitudinal optical ͑LO͒ multiphonon emission in bulk ZnTe is analyzed in Ref. 6, where a simple analytical expression explains all the emissions as outgoing resonances.…”

Section: Introductionmentioning

confidence: 99%

Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

Camacho

Cantarero

Hernández‐Calderón

et al. 2002

Journal of Applied Physics

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We report resonant Raman scattering and photoluminescence ͑PL͒ measurements on two ZnTe thin films grown by molecular-beam epitaxy on GaAs substrates with thicknesses around 0.5 and 1.0 m. The data have been obtained by using the different excitation energies of an Ar ϩ laser to distinguish Raman from PL and analyze resonant effects. The characteristic features of the low-temperature PL spectra are the light and heavy free exciton emissions, split due to the thermal strain effect, followed by several phonon replicas of these lines. Moreover, longitudinal and transversal polariton splittings of heavy excitons are clearly observed. Their reduced masses have been obtained from the exciton binding energies. Room and low-temperature Raman spectra show, besides the typical longitudinal optical ͑LO͒ multiphonon emissions, forbidden zone-center transverse optical (TO)ϩ(nϪ1)LO phonon combinations, which yield an accurate value for the LO and TO phonon energies. The breakdown of the selection rules is attributed to surface faceting.

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“…The longitudinal optical ͑LO͒ multiphonon emission in bulk ZnTe is analyzed in Ref. 6, where a simple analytical expression explains all the emissions as outgoing resonances.…”

Section: Introductionmentioning

confidence: 99%

Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

Camacho

Cantarero

Hernández‐Calderón

et al. 2002

Journal of Applied Physics

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“…On the other hand, the intensity of a Raman scattering process in consecutive orders should behave as described in Refs. [3] and [4]. For example the second component should be proportional to C 2 , where C is the electron-phonon coupling constant.…”

Section: Resultsmentioning

confidence: 99%

Spatial Fluctuations and Localisation Effects in Optical Characteristics of p-Doped GaN Films

Goldys

Godlewski

Kamińska

et al. 2001

phys. stat. sol. (b)

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We report the observation of several intense satellite lines in the emission of p-GaN excited at 325 nm with separations suggesting a multiple LO phonon-related process. The observed phenomenon is interpreted as hot exciton luminescence enhanced by potential fluctuations and localisation. Using optically detected magnetic resonance and photoluminescence kinetics we explore the compensation processes underpinning these localisation effects.

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“…Since the emission of 1LO phonons is forbidden by selection rules in cascade process, , the I 2LO / I 1LO reflects the probability of cascade process to that of a physically different process giving the 1LO line (e.g., impurity-induced Raman scattering). The distinction between true RRS and cascade processes is a long-standing challenge, , and the RRS spectra were ambiguously interpreted in existing studies of ZnO nanostructures (Table ). Some studies suggested the true RRS process and correlated the I 2LO / I 1LO with the EPC strength, − while others applied the cascade model in which the I 2LO / I 1LO has a completely different interpretation. ,,− For QDs, because the separation between their discrete energy levels exceeds the LO phonon energy, the cascade process is forbidden, and thus the LO overtones can only originate from the true RRS process.…”

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confidence: 99%

Optical Phonon Behaviors of Photocharged Nanocrystals: Effects of Free Charge Carriers

Zhang

Chang

Wang

et al. 2018

J. Phys. Chem. Lett.

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For semiconductor nanocrystals (NCs), the precise knowledge of phonons in the presence of free carriers is important for understanding their electronic and photonic properties in device applications. With Raman spectroscopy, this study investigates the effects of free charge carriers on optical phonon behaviors of NCs. The adoption of the photocharging method allows us to introduce free charge carriers into NCs without inducing other side effects. In the photocharged ZnO NCs, lower longitudinal optical (LO) phonon frequencies and weaker LO overtones relative to the fundamentals were found, which was explained by the screening and band-filling effects caused by the induced free carriers. The free carrier effects on optical phonon behaviors of NCs, usually neglected in previous studies, should be taken into consideration when discussing the electronic and photonic properties of NC-based devices.

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Multiple phonon overtones in ZnTe

Cited by 16 publications

References 18 publications

Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

Spatial Fluctuations and Localisation Effects in Optical Characteristics of p-Doped GaN Films

Optical Phonon Behaviors of Photocharged Nanocrystals: Effects of Free Charge Carriers

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