Multiple conduction paths in boron δ-doped diamond structures

Tumilty, Niall; Welch, Joseph; Ye, Haitao; Balmer, R.S.; Wort, C. J. H.; Lang, R. H.; Jackman, Richard B.

doi:10.1063/1.3075860

Cited by 11 publications

(5 citation statements)

References 16 publications

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“…[11][12][13] Temperature-dependent impedance spectroscopy measurements have also been performed to identify the different conduction paths in the stacked structures. 14,15 Hall effect combined to four probe resistivity measurements have also been used to evaluate the sheet density (p S ) and the carrier mobility (l H ). [15][16][17][18] A low sheet carrier density p S ' 10 13 cm À2 and a hole mobility l H ¼ 13 cm 2 / V.s at room temperature in delta structures grown on [111]-oriented diamond substrates were reported, 15 but unfortunately, no temperature dependence of p S and l H in delta structures was shown for the same samples.…”

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confidence: 99%

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Chicot

Fiori

Volpe

et al. 2014

Journal of Applied Physics

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Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K < T < 450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.6 ± 0.8 cm2/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm

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confidence: 99%

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Chicot

Fiori

Volpe

et al. 2014

Journal of Applied Physics

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“…6,7 Temperature dependent impedance spectroscopy measurements have been recently performed to identify the different conduction paths in the stacked structures. 8,9 Hall effect combined to four probes resistivity measurements have also been used to measure the sheet density (p S ) and the carrier mobility (l H ). 9,10 The most recent of these works reported a low sheet density (p S ' 10 13 cm À2 ) and a hole mobility (l H ¼ 13 cm À2 =V Á s) larger than the one expected for highly doped diamond at room temperature in d-structures on [111]-oriented diamond substrates.…”

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confidence: 99%

Hole transport in boron delta-doped diamond structures

Chicot

Thi

Fiori

et al. 2012

Applied Physics Letters

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International audienceThe temperature dependence of the hole sheet density and mobility of four capped delta boron doped [100]-oriented epilayers has been investigated experimentally and theoretically over a large temperature range (6K < T < 500 K). The influence of the parallel conduction through the thick buffer layer overgrown on the diamond substrate was shown not to be negligible near room temperature. This could lead to erroneous estimates of the hole mobility in the delta layer. None of the delta-layers studied showed any quantum confinement enhancement of the mobility, even the one which was thinner than 2 nm

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“…The IS technique has been effectively utilized to analyse the electric transport of bulk diamond and nanodiamonds, previously. [16][17][18][19] However, no efforts have been made on the more complex diamond MOS structure.…”

Section: International Center For Materials Nanoarchitectonics (Mana)mentioning

confidence: 99%

Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

Liao

Liu

Sang

et al. 2015

Applied Physics Letters

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Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al 2 O 3 is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect.By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed. a)

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Multiple conduction paths in boron δ-doped diamond structures

Cited by 11 publications

References 16 publications

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Hole transport in boron delta-doped diamond structures

Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

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