Multiphysics simulation of hypersensitive microbolometer sensor using vanadium dioxide and air suspension for millimeter wave imaging

Chen, Shangyi; Lust, Mark; Ghalichechian, Nima

doi:10.1007/s00542-020-05031-0

Cited by 17 publications

(13 citation statements)

References 28 publications

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“…In Figure 3b (left axis), we plot resistance versus temperature, which exhibits a non-linear behavior. Using this data, we calculate the temperature coeffi-cient of resistance (𝛼): [40]…”

Section: Resultsmentioning

confidence: 99%

“…In Figure 3b (left axis), we plot resistance versus temperature, which exhibits a non‐linear behavior. Using this data, we calculate the temperature coefficient of resistance ( α ): [ 40 ]

\begin{eqnarray} \alpha = \frac{1}{R}\ \frac{{\partial R}}{{\partial T}} \times 100 \end{eqnarray}

where R is the bolometer channel resistance and T is the absolute temperature. We plot the measured α versus T as Figure 3b (right y ‐axis).…”

Section: Resultsmentioning

confidence: 99%

“…A similar behavior in α of VO x , at the temperature induced insulator to metal transition (IMT) point is reported in the literature. [ 40 ]…”

Section: Resultsmentioning

confidence: 99%

“…A similar behavior in 𝛼 of VO x , at the temperature induced insulator to metal transition (IMT) point is reported in the literature. [40] Next, we measure the photocurrent (at 𝜆 = 2.2 μm) as a function of temperature and incident power density and plot as Figure 3c. At room temperature, the photocurrent follows a similar trend to that seen in Figure 2d.…”

Section: Resultsmentioning

confidence: 99%

See 3 more Smart Citations

Flexible Vanadium Dioxide Photodetectors for Visible to Longwave Infrared Detection at Room Temperature

Balendhran

Taha

Wang

et al. 2023

Adv Funct Materials

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Flexible optoelectronics is a rapidly growing field, with a wide range of potential applications. From wearable sensors to bendable solar cells, curved displays, and curved focal plane arrays, the possibilities are endless. The criticality of flexible photodetectors for many of these applications is acknowledged, however, devices that are demonstrated thus far are limited in their spectral range. In this study, flexible photodetectors are demonstrated using a VOx nanoparticle ink, with an extremely broad operating wavelength range of 0.4 to 20 µm. This ink is synthesized using a simple and scalable wet‐chemical process. These photodetectors operate at room temperature and exhibit minimal variance in performance even when bent at angles of up to 100 ° at a bend radius of 6.4 mm. In addition, rigorous strain testing of 100 bend and release cycles revealed a photoresponse with a standard deviation of only 0.55%. This combination of mechanical flexibility, wide spectral response, and ease of fabrication makes these devices highly desirable for a wide range of applications, including low‐cost wearable sensors and hyperspectral imaging systems.

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Section: Resultsmentioning

confidence: 99%

“…In Figure 3b (left axis), we plot resistance versus temperature, which exhibits a non‐linear behavior. Using this data, we calculate the temperature coefficient of resistance ( α ): [ 40 ]

\begin{eqnarray} \alpha = \frac{1}{R}\ \frac{{\partial R}}{{\partial T}} \times 100 \end{eqnarray}

where R is the bolometer channel resistance and T is the absolute temperature. We plot the measured α versus T as Figure 3b (right y ‐axis).…”

Section: Resultsmentioning

confidence: 99%

“…A similar behavior in α of VO x , at the temperature induced insulator to metal transition (IMT) point is reported in the literature. [ 40 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Flexible Vanadium Dioxide Photodetectors for Visible to Longwave Infrared Detection at Room Temperature

Balendhran

Taha

Wang

et al. 2023

Adv Funct Materials

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show abstract

“…[3,4] Moreover, optically broadband and mechanically deformable photo-monitoring devices (e.g., imagers and sensors) effectively govern their use in non-destructive inspections. [5,6] Broadband device operations aggregate multi-wavelength optical information and subsequently identify the material compositions of the targets. [7,8] Deformable device operations provide omni-directional viewing angles without blind spots against even 3D structures by comprehensively surrounding the targets.…”

Section: Introductionmentioning

confidence: 99%

All‐Screen‐Coatable Photo‐Thermoelectric Imagers for Physical and Thermal Durability Enhancement

Li,

Matsuzaki,

Takahara

et al. 2023

Adv Materials Inter

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Carbon nanotube (CNT) film photo‐thermoelectric (PTE) imagers are suitable for non‐destructive inspection techniques owing to their functionalities. Simultaneously, their practical application remains a crucial bottleneck due to low yield handling in the device fabrication (e.g., disconnections between photo absorbent channels and readout electrodes). However, studies clarifying the above malfunction mechanism and associated dominant factors in device handling, such as specific fabrication or material selection steps, still need to be completed. To address this issue, this work introduces all‐screen‐coatable fabrication techniques for CNT film PTE imagers to enhance their physical and thermal durabilities. First, this work determined that the transfer of CNT films on supporting substrates dominantly governs the mechanical robustness of the channels and that thermal curing in the subsequent fabrication process is an essential factor in the yields of channel‐electrode connections. The proposed approach ensures a transfer‐free direct coating of the CNT film on diverse substrates and is sufficiently durable against thermal curing‐induced disconnections at the channel‐electrode interfaces. The screen‐coating technique is also available for whole device materials of solution‐processable CNT film PTE imagers, simplifying fabrication processes. All‐screen‐coatable CNT film PTE imagers synergize their inherent functional sensing and high‐yield operations toward versatile applications.

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Integrated Bolometric Photodetectors Based on Transparent Conductive Oxides from Near‐ to Mid‐Infrared Wavelengths

Gosciniak

2023

Advanced Photonics Research

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On‐chip photodetectors are essential components in optical communications as they convert light into an electrical signal. Photobolometers are a type of photodetector that functions through a resistance change caused by electronic temperature fluctuations upon light absorption. They are widely used in the broad wavelength range from ultraviolet to mid‐infrared (MIR). In this work, a novel waveguide‐integrated bolometer that operates in a wide wavelength range from near‐infrared to MIR is introduced on the standard material platform with the transparent conductive oxides (TCOs) as the active material. This material platform enables the construction of both modulators and photodetectors using the same material, which is fully complementary metal–oxide–semiconductor compatible and easily integrated with passive on‐chip components. The photobolometers proposed here consist of a thin TCO layer placed inside the rib photonic waveguide to enhance light absorption and then heat the electrons in the TCO. This rise in electron temperature leads to decreasing electron mobility and consequential electrical resistance change. In consequence, a responsivity exceeding 10 A W−1can be attained with a mere few microwatts of optical input power. Calculations suggest that further improvements can be expected with lower doping of the TCO, thus opening new doors in on‐chip photodetectors.

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Multiphysics simulation of hypersensitive microbolometer sensor using vanadium dioxide and air suspension for millimeter wave imaging

Cited by 17 publications

References 28 publications

Flexible Vanadium Dioxide Photodetectors for Visible to Longwave Infrared Detection at Room Temperature

Flexible Vanadium Dioxide Photodetectors for Visible to Longwave Infrared Detection at Room Temperature

All‐Screen‐Coatable Photo‐Thermoelectric Imagers for Physical and Thermal Durability Enhancement

Integrated Bolometric Photodetectors Based on Transparent Conductive Oxides from Near‐ to Mid‐Infrared Wavelengths

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