Multiphase structure of hydrogen diluted a-SiC:H deposited by HWCVD

Amorphous carbon-based films with surface-plasmon-enhanced full-color photoluminescence

“…For a-C:H film, PL is only attributed to the radiative recombination within sp 2 carbon clusters [20,22,23]. The variations of PL peak energy and refractive index with the film composition have been widely reported in the literatures [21,[24][25][26][27], so we will not discuss these further in this study. As shown in Fig.…”

Plasmon loss and valence band structure of silicon-based alloys deposited by hot wire chemical vapor deposition

“…1(b and c), Si-Si and Si-N peaks appear at 100.3 eV and 100.9 eV, respectively, for a-SiN:H and Si-Si and Si-C core orbital peaks appear at 99.08 eV and 100.8 eV, respectively, in a-SiC:H films. The shifts of Si(2p) core orbital peaks are due to involvement of higher electronegative atoms [5][6][7]. Fig.…”

“…Aim of this study is to give for the first time a comparative picture of valence band of high electronic quality a-SiC:H and a-SiN:H films in the HWCVD system. Moreover, the a-SiC:H and a-SiN:H alloys, which are known to have a more complex structure for the presence of carbon and nitrogen, respectively [5][6][7], has been deposited with different carbon sources and the a-SiN:H alloy has been deposited in standard silane-ammonia precursor gas [8]. Plasmon loss energy is strongly correlated with mechanical and structural properties of amorphous and nc-silicon embedded in amorphous films.…”

Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method

“…Figure 6 shows the Raman spectra in the range 200-1200 cm −1 of SiC:H films deposited at various deposition pressures by HW-CVD method using CH 4 as carbon source gas. The Si-C band, which is expected to be observed in the range 600-1000 cm −1 , is very weak as the Raman efficiency of the Si-C band is much smaller than that of C-C and Si-Si bands [42]. However, following observations have been made from the Raman spectra for the films deposited at different deposition pressures.…”