Plasmon loss and valence band structure of silicon-based alloys deposited by hot wire chemical vapor deposition

Swain, Bibhu P.; Park, Sung H.; Hwang, Nong M.

doi:10.1016/j.jallcom.2009.02.057

Cited by 10 publications

(7 citation statements)

References 22 publications

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“…Recently, boron-doped microcrystalline silicon and microcrystalline Si-based alloys have attracted a great deal of attention due to their potential application as a window layer of microcrystalline silicon-based p-i-n junction solar cells [1][2][3][4][5][6][7]. Compared to B-doped amorphous Si, this material has a higher dark conductivity, carrier mobility, doping efficiency, optical transparency, etc., due to the presence of Si crystallites embedded in the amorphous Si or Si-based matrices [8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

Huang

Cheng

et al. 2010

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

Huang

Cheng

et al. 2010

Journal of Alloys and Compounds

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“…Since the strongest absorption band from nc-Si(SiC) is observed in the range of 500 -1200 cm -1 , therefore analysis of this band is the focus of the investigation. As seen from the FTIR spectra, the lms deposited at process pressure atmospheric pressure shows the various transmission peaks centred at652 cm −1 , 828 cm −1 , 872 cm −1 , 1015 cm −1 , 1043 cm −1 ,1128 cm -1 and 1175 cm -1 [27][28][29]. The band at 652 cm -1 correspondings to Si-H wagging or rocking mode matched with previous research groups [27]while the strong band at 780-800 cm -1 corresponds to Si-C stretching mode [27,28].…”

Section: 4: Chemical Bonding Ofnc-si(sic)mentioning

confidence: 95%

“…As seen from the FTIR spectra, the lms deposited at process pressure atmospheric pressure shows the various transmission peaks centred at652 cm −1 , 828 cm −1 , 872 cm −1 , 1015 cm −1 , 1043 cm −1 ,1128 cm -1 and 1175 cm -1 [27][28][29]. The band at 652 cm -1 correspondings to Si-H wagging or rocking mode matched with previous research groups [27]while the strong band at 780-800 cm -1 corresponds to Si-C stretching mode [27,28]. However, we observed the SiC stretching vibration at 820-875 cm -1 due to contaminating oxygen attached to SiC.These shifts in the vibrational band towards the higher values may be due to the increasing concentration of hydrogen in SiC thin lms..…”

Section: 4: Chemical Bonding Ofnc-si(sic)mentioning

confidence: 95%

Process Dependent Strain Behaviour, Fractal Analysis, and Bonding Network of Nc-Si(SiC) Thin Films

Swain

2021

Silicon

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Nanocrystalline silicon embedded silicon carbide, nc-Si(SiC) thin lms were deposited on p-type silicon substrates by using a thermal chemical vapor deposition (CVD) with different process temperatures varied from 700-1000 o C. The SEM images reveal the Si particles are embedded with SiC thin lms. The estimated lattice-strainof nc-Si(SiC) thin lms from Williamson-Hall and Scherer formula was varied from 0.00227 to 0.00469 and 0.000855 to 0.00574 respectively. The Raman signature at the 1346.19 cm − 1 , 1491.78 cm − 1 and 1570.94 cm − 1 bonding correspond to D, G-Si and G peaks respectively. The estimated band gap from Tauc's plot of nc-Si(SiC) thin lms are 3.17 to 2.87 eV respectively with increasing of process temperature. The observed crystalline size of nc-Si in nc-Si(SiC) is from 21 nm to 27 nm from 700 to 1000 o C respectively. The possible bonding network of core-orbital of Si(2p), C(1s), and O(1s) in the C: ZnO thin lms have been discussed by deconvolution with the Origin 2018.

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“…Fourier-transform infrared spectroscopy (FTIR) of the H:SiN x films was carried out using a Nicolet iS50 (Thermo A survey of the published literature shows that process modeling of CMCs has been studied by a number of researchers. Processes that have been modeled include RMI, 15,16 CVD, 17,18 CVI, [19][20][21][22] and Sol-Gel Infiltration. 23 Impregnation of alumina matrix in eight-harness satin Nextel 610 fabric has been studied numerically in Ref.…”

Section: Characterizationmentioning

confidence: 99%

Effect of H₂ addition during PECVD on the moisture barrier property and environmental stability of H:SiN_x film

et al. 2021

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A hydrogenated silicon nitride (H:SiN x ) film with enhanced moisture barrier property and environmental stability was developed using plasma-enhanced chemical vapor deposition (PECVD) with the addition of H 2 gas at 100°C. The moisture barrier property and film density of the 100-nm-thick H:SiN x film were ameliorated by increasing the H 2 gas flow rate during PECVD. X-ray photoelectron spectroscopy and Fouriertransform infrared spectroscopy studies demonstrated that the improved performance was a result of an increase in the amount of Si-N bonds compared to hydrogenterminated bonds with an increase in the H 2 gas flow rate. It is believed that H 2 gas assisted the formation of aminosilane, which contributed to the condensation of silicon nitride by lowering the activation energy for radicalization reactions of silane and ammonia. After the 85°C/85% RH test, the optimized H:SiN x film maintained a water vapor transmission rate lower than 5 × 10 −5 g/m 2 /day owing to the suppression of oxidation. The optimized H:SiN x film was rarely oxidized owing to the decrease in hydrogen-terminated bonds and increase in the film density. The results indicated that the introduction of H 2 gas during the PECVD process strengthened the environmental stability of the H:SiN x film.

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Plasmon loss and valence band structure of silicon-based alloys deposited by hot wire chemical vapor deposition

Cited by 10 publications

References 22 publications

Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

Process Dependent Strain Behaviour, Fractal Analysis, and Bonding Network of Nc-Si(SiC) Thin Films

Effect of H₂ addition during PECVD on the moisture barrier property and environmental stability of H:SiN_x film

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Plasmon loss and valence band structure of silicon-based alloys deposited by hot wire chemical vapor deposition

Cited by 10 publications

References 22 publications

Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

Process Dependent Strain Behaviour, Fractal Analysis, and Bonding Network of Nc-Si(SiC) Thin Films

Effect of H2 addition during PECVD on the moisture barrier property and environmental stability of H:SiNx film

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Effect of H₂ addition during PECVD on the moisture barrier property and environmental stability of H:SiN_x film