Multilevel resistive switching and synaptic plasticity of nanoparticulated cobaltite oxide memristive device

Dongale, Tukaram D.; Khot, Atul C.; Takaloo, Ashkan Vakilipour; Son, Kyung Rock; Kim, Tae Geun

doi:10.1016/j.jmst.2020.10.046

Cited by 31 publications

(15 citation statements)

References 67 publications

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“…15 It is easy to modulate the conductive filament size and shape within the switching layer by controlling the applied V STOP voltages and compliance current. 53 Such strategies are simple as compared to the complex interface engineering methods. Furthermore, modulation of conductive filament can be useful to tune the synaptic weights of the devices, which results in an excellent artificial synaptic device.…”

Section: Resultsmentioning

confidence: 99%

“…On the other hand, high work function-based metal electrodes form a Schottky barrier between the top electrode and switching layer, which results in an interfacial type switching . It is easy to modulate the conductive filament size and shape within the switching layer by controlling the applied V STOP voltages and compliance current . Such strategies are simple as compared to the complex interface engineering methods.…”

Section: Resultsmentioning

confidence: 99%

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Binder-Free Synthesis of Nanostructured Amorphous Cobalt Phosphate for Resistive Memory and Artificial Synaptic Device Applications

Katkar

Padalkar

Kumbhar

et al. 2022

ACS Appl. Electron. Mater.

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The rise of artificial intelligence and machine learning demands versatile electronic devices for memory and braininspired computing applications. The electronic materials are the backbones of these applications. Considering this, a functional Co x (PO 4 ) 2 nanomaterial was synthesized for resistive memory and neuromorphic computing applications. The synthesized nanomaterial was well characterized by using X-ray diffraction, Fourier transform infrared spectroscopy, field emission-scanning electron microscopy, and X-ray photoelectron spectroscopy. The fabricated Ag/Co x (PO 4 ) 2 /ITO device shows bipolar resistive switching and memristive properties. The SET and RESET voltages were analyzed by using different statistical measures, and their distribution was studied by using the Weibull technique. The results suggested that the SET voltages were more uniformly distributed than the RESET voltage. The switching nonlinearity was modeled and predicted by using Holt's exponential smoothingbased statistical time series analysis method. In the case of nonvolatile memory tests, the device shows good endurance (10 3 cycles) and memory retention (3 × 10 4 s) with excellent memory window (1.7 × 10 3 ) properties. Moreover, the device can mimic the potentiation−depression and spike-timing-dependent plasticity-based Hebbian learning rules, suggesting Co x (PO 4 ) 2 is a potential nanomaterial for the fabrication of artificial synapse. The detailed analysis of electrical results suggested that the space-charge-limited current-based charge transport was responsible for the device conduction, whereas the formation and rupture of conductive filament(s) were responsible for the resistive switching in the Ag/Co x (PO 4 ) 2 /ITO memristive device. The results of the present investigation suggested that the Co x (PO 4 ) 2 nanomaterial is a potential candidate for resistive memory and brain-inspired computing applications

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Binder-Free Synthesis of Nanostructured Amorphous Cobalt Phosphate for Resistive Memory and Artificial Synaptic Device Applications

Katkar

Padalkar

Kumbhar

et al. 2022

ACS Appl. Electron. Mater.

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“…This due to the fact that the filamentary-based RS generally shows abrupt RS, which can be exploited to fabricate bilevel or multilevel nonvolatile memory devices. [5,21] In addition to this, filamentary RS devices can be used for memory, neuromorphic computing, and security applications. [22][23][24] In general, the nonfilamentary RS devices show the analog/gradual-type RS.…”

Section: Brief Overview Of the Rs Devicesmentioning

confidence: 99%

Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application

Dongale

Kamble

Kang

et al. 2021

Physica Rapid Research Ltrs

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The recent progress of selector and self-rectifying devices for resistive randomaccess memory applications is reviewed. In particular, the performance of crossbar arrays based on resistive switching (RS) devices, the sneak-path current issue, and possible solutions is discussed. The parameters and requirements of selector devices are elucidated here, and several types of selector devices, such as a transistor-assisted transistor-one resistor, unipolar one diode-one resistor, bipolar one selector-one resistor, and threshold switching selectors, are comprehensively discussed. In the case of self-rectifying devices, the recent progress in complementary RS devices, vacancy-modulated conductive oxide-based devices, and tunneling barrier-based RS devices is reviewed. The switching mechanisms and the geometrical configuration of the selector and self-rectifying RS devices are emphasized. Furthermore, comparative assessments of the different devices are evaluated. Finally, an overview of the gaps in previously reported devices is presented and some key improvements for future research direction suggested.

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“…Volatile/non-volatile bifunctional memristors with one or two functions have been studied, as shown in Table 1. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] However, versatile memristors covering multiple functions, such as non-volatile memory, selectors, artificial neurons, and artificial synapses have not been investigated. It is difficult to guarantee large storage windows (both volatile and non-volatile models), excellent endurance, and multiple functions simultaneously.…”

Section: Introductionmentioning

confidence: 99%

Versatile memristor for memory and neuromorphic computing

et al. 2022

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Multilevel resistive switching and synaptic plasticity of nanoparticulated cobaltite oxide memristive device

Cited by 31 publications

References 67 publications

Binder-Free Synthesis of Nanostructured Amorphous Cobalt Phosphate for Resistive Memory and Artificial Synaptic Device Applications

Binder-Free Synthesis of Nanostructured Amorphous Cobalt Phosphate for Resistive Memory and Artificial Synaptic Device Applications

Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application

Versatile memristor for memory and neuromorphic computing

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