Multilevel resistance state of Cu/La2O3/Pt forming-free switching devices

Light-Emitting Devices Modulated by Multilevel Resistive Memories

“…Two peaks can be observed from the O 1s XPS spectra of the GaN surface (Figure 1b), which can be attributed to Ga−O bonding (530.3 eV) and nonlattice oxygen ions (531.9 eV). 18,23,24 The XPS spectra of Ga 2p 3/2 in Figure 1c shows three peaks, which can be attributed to Ga−Ga bonding (1116.5 eV), Ga−N bonding (1118.0 eV) and Ga−O bonding (1119.0 eV). 23,25,26 In this structure, the Au/GaO x /p-GaN multilevel RRAM acts as a driving current controller and the p-GaN/n-ZnO performs as a luminescent device.…”

“…In the past decades, light-emitting devices (LEDs) have attracted much attention for their significance in both fundamental research and practical applications in the field of displaying, lighting, labeling, and so on due to their advantages of high brightness, high efficiency, and long lifetime. − For the technological applications of displays, the on/off state and gray scale of each pixel are controlled by external thin film transistor (TFT) or complementary metal-oxide-semiconductor (CMOS) via modulating the injection current, which are constructed by complicated fabrication techniques. − If the number of transistors and circuit complexity could be reduced, more integrated and low-cost LED display panels may be achieved. Due to their multilevel switching characteristics and simple structure, resistive random access memories (RRAMs) may be a promising way to modulate the driving current applied on LED pixels. − In general, an RRAM memory is composed of a metal–insulator–metal (MIM) sandwich structure or a Schottky junction . The underlying mechanism behind RRAMs is resistive switching. − Meanwhile, multilevel RRAMs, in which multilevel resistance states (RSs) are achieved by means of different set voltages ( V set ), may be utilized to modulate the driving current applied onto the LED pixels, thus, realizing on/off state and gray scale by modulating the luminous intensity of the LEDs.…”

Multi-Level Switching of Al-Doped HfO2 RRAM with a Single Voltage Amplitude Set Pulse

“…This will increase the operational difficulty in the above applications. Few scholars have realized that the device can reach a certain conductivity range accurately through a train of identical pulses [29], which has a simple structure that facilitates a highly integrated implementation and is therefore best suited for neuromorphic applications. In addition, it was reported that the reset operation usually features a gradual change in the device conductance.…”

“…In addition, it was reported that the reset operation usually features a gradual change in the device conductance. The resistive switching is inherently stochastic due to the randomness of the generation and the migration of oxygen vacancy based on the Kinetic Monte Carlo simulation proposed by Yu et al [29]. The sudden change in conductivity in the set process requires an additional current compliance [12,15,30,31] to prevent device damage, which is the problem that must be overcome to realize the above scheme.…”

Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application

“…Among diverse RE materials, the most stable compounds are RE oxides (REOs), in which most of the RE elements hold typically a trivalent state with the general formula of sesquioxide, Ln 2 O 3 (e.g., Sc 2 O 3 , Y 2 O 3 , La 2 O 3 , Sm 2 O 3 , and Er 2 O 3 ), while for Ce, Pr, and Tb, more stable oxides exist as CeO 2 , Pr 6 O 11 , and Tb 4 O 7 , respectively . The applications of REOs have now been broadened to luminescent, optical, and dielectric materials. − Previous studies on REOs revealed that they possess remarkable electrical properties, such as high relative dielectric constant, large areal capacitance, superior electrical breakdown strength, high transparency, and superior thermal stability which fulfill the requirements of dielectrics in electronics, especially thin-film transistors (TFTs). ,− Except for Pm 2 O 3 due to its radioactive property, all the other 16 REOs films have been studied and employed as gate dielectrics in recent years, and the results revealed that the REOs are promising candidates as alternative gate dielectrics to traditional SiO 2 . − Therefore, REOs, together with other potential oxides (e.g., Al 2 O 3 , ZrO 2 , and HfO 2 ), have also been considered as solutions to the problems of large leakage current, high standby power consumption, and inferior gate dielectric reliability for continued downscaling of electronics. − Usually, these oxides were prepared by some traditional costly vacuum-based techniques, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD), which are expensive and time-consuming. ,,− In this regard, solution-processable dielectrics are more favorable in electronics as they are cost-effective and can be manufactured in large amounts. − Sol–gel method is a well-known and popular technique as it offers the possibility of tuning properties of resulting products by adjusting the precursor solutions easily. It has been empolyed in numerous fields including the preparation of high performance dielectrics.…”