Multilevel Photonic Transistor Memory Devices Based on 1D Electrospun Semiconducting Polymer /Perovskite Composite Nanofibers

Abstract

Photonic field‐effect transistor (FET) memory devices offer unique advantages over conventional voltage‐driven memory devices, such as noncontact programming capability, rapid data transmission, and low power consumption. In this article, the first example of a nanofiber‐only photonic FET memory device is reported. Perovskite nanocrystal (βNC)‐embedded polythiophenes are employed as 1D semiconducting channels of the nanofiber matrix. A decent On/Off current ratio of ≈103 is reached for the best device with a prolonged data retention of over 104 s, attributing to the favorable energy level alignment and molecular packing of conjugated polymers in nanofibers. The composite nanofiber system exhibits superior photoresponsivity and charge retention, outperforming its film‐based counterpart owing to its regular 1D confined structure, and well‐dispersed βNCs. Collectively, the structurally fine‐tuned conjugated polymer and the 1D confined structure in the nanofiber promise good data discriminability and a highly fault‐tolerant photonic memory device. In addition, the fiber‐based flexible memory device exhibits excellent photonic memory performance, indicating its integrity for application in wearable electronics. The current system represents the first application of 1D perovskite nanocrystal/conjugated polymer composite nanofibers for high‐performance photonic memory devices, which reveals their potential to make composite nanostructures for novel pioneering photonic applications.

Low‐Dimensional Metal‐Halide Perovskites as High‐Performance Materials for Memory Applications

“…In 2021, Chen and his colleagues demonstrated a nanofiber-based photonic FET memory in which the nanofiber was achieved by coaxial electrospinning of MAPbBr 3 NCs (charge trapping/de-trapping) and various conjugated polymers (semiconducting channel) on the SiO 2 /Si substrate without any floating gate or polymer electret layer. [217] The as-obtained photonic FET memory showed a decent photo-programmed performance with an ON/OFF ratio of 10 3 and retention of 10 4 s. More importantly, the flexible characteristics of the device were also demonstrated, in which the fabricated photonic FET could retain its ON/OFF ratio after bending 100 times, suggesting excellent flexible characteristics and possibility in wearable storage electronics.…”

Nanostructured perovskites for nonvolatile memory devices

“…Ercan and co-workers prepared a nanofiber-based photonic storage device in which the nanofiber was obtained by electrospinning. 176 Particularly, the perovskite nanocrystals (CH 3 NH 3 PbBr 3 ) and the electrospinning solutions were mixed before the spinning of the nanofiber. Fig.…”

Recent Advances in Organic Phototransistors: Nonvolatile Memory, Artificial Synapses, and Photodetectors

“…Subsequently, a fiberbased flexible memory device with a polyimide-based substrate and a dielectric with excellent memory performance was shown to be useful in wearable electronics applications. [56] In a conventional phototransistor, the photogenerated charges in a channel tend to recombine with each other due to the long channel length (usually several micrometers), producing a reduced separation efficiency. To overcome this obstacle, recently, a nascent approach by applying a vertical structure enables ultrashort channel length and the vertical pathway of charge transfer to suppress charge recombination.…”

“…Subsequently, a fiber‐based flexible memory device with a polyimide‐based substrate and a dielectric with excellent memory performance was shown to be useful in wearable electronics applications. [ 56 ]…”