Multilevel behavioral simulation of VCSEL-based optoelectronic modules

Toffano, Zeno; Pez, M.; Desgreys, Patricia; Hervé, Y.; Brun, Christophe; Mollier, Jean-Claude; Barbary, G.; Charlot, J.-J.; Constant, S.; Destrez, A.; Karray, Mohamed Kadhem; Marec, M.; Rissons, Angélique; Snaidero, S.

doi:10.1109/jstqe.2003.818348

Cited by 14 publications

(3 citation statements)

References 16 publications

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“…The concept of our method is based on the electrical modeling of the VCSEL chip. Even if the electrical model of the active region is known to exist [6], that of the entire chip is more complex to determine because of parasitics related to the transmission line. An electrical equivalent circuit is used to model the electrical access of the chip and is presented in Fig.3.…”

Section: A the Electrical Equivalent Circuitmentioning

confidence: 99%

VCSEL Intrinsic Response Extraction Using $T$-Matrix Formalism

Bacou

Hayat

Rissons

et al. 2009

IEEE Photon. Technol. Lett.

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We present a new method to remove the parasitics contribution to the VCSEL chip response, in order to obtain the intrinsic S21 behavior. The on-chip VCSEL is defined as two cascaded two-port subsystems representing the electrical access and the VCSEL optical cavity respectively. S11 and S21 parameters measurements are carried-out using a probe station to characterize the chip response. An electrical equivalent circuit defining the behavior of the electrical access is combined with T-Matrix formalism to remove the parasitics contribution from the measured S21 response. Results allow us to determine the intrinsic 3-dB bandwidth of the VCSEL.

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Section: A the Electrical Equivalent Circuitmentioning

confidence: 99%

VCSEL Intrinsic Response Extraction Using $T$-Matrix Formalism

Bacou

Hayat

Rissons

et al. 2009

IEEE Photon. Technol. Lett.

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“…Temperature change causes wavelength shift, therefore the laser beam as deflected by the diffractive in-coupling optical element deviates from its desired path and can miss the out-coupling element. For example, for a typical 850-nm vertical-cavity surfaceemitting lasers ͑VCSEL͒ source the wavelength shift is d / dT = 0.06 nm/ K, 9 i.e., relative wavelength shift is ͑1/͒͑d / dT͒ϳ7 ϫ 10 −5 K −1 . If POI was assembeled at 20°C, the working temperature is 140°C ͑Max3905 from Dallas Semiconductors, e.g.͒, and the POI length is 10 cm, the resulting beam deviation is about 1.7 mm ͑see below the calculation͒.…”

mentioning

confidence: 99%

Mechanical means for temperature compensation of planar diffractive optical interconnects: feasibility study

Socol¹

2006

Opt. Eng

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Abstract. Planar diffractive optical interconnects have many advantages, however, their inherent chromaticity leads to temperature instability due to the wavelength shift of laser diodes' radiation. This shift can be compensated if the optical interconnect is bended in an appropriate direction with curvature proportional to the relative wavelength shift. The bending can be performed by attaching an additional plate to the element with a different thermal expansion coefficient. Theoretical analysis and ray tracing are reported. In the semiconductor industry, there is a continually aggravating problem of increasing communication volume. Optical interconnection technology is seen as a prime option for solving this problem.1,2 In planar optical interconnects ͑POI͒ light is injected ͑by an in-coupling optical element͒ into a transparent slab ͑light guide͒ at a total internal reflection angle ͑ in Fig. 1͒ and propagates along it until it meets an out-coupling optical element and goes to the detector. Diffractive lenses as coupling optical elements have many advantages [3][4][5] and have been suggested also in the context of quasi-optics 6 for rapidly expanding terahertz technology.7 However, their intrinsic dependence of optical properties on the wavelength-chromaticity-poses difficult problems.8 Chromaticity leads also to temperature instability. Namely, the wavelength of semiconductor lasers is temperature-dependent. Temperature change causes wavelength shift, therefore the laser beam as deflected by the diffractive in-coupling optical element deviates from its desired path and can miss the out-coupling element. For example, for a typical 850-nm vertical-cavity surfaceemitting lasers ͑VCSEL͒ source the wavelength shift is d / dT = 0.06 nm/ K, 9 i.e., relative wavelength shift is ͑1/͒͑d / dT͒ϳ7 ϫ 10 −5 K −1 . If POI was assembeled at 20°C, the working temperature is 140°C ͑Max3905 from Dallas Semiconductors, e.g.͒, and the POI length is 10 cm, the resulting beam deviation is about 1.7 mm ͑see below the calculation͒. This temperature instability is specific for diffracive POI since other thermal effects are much less: e.g., for fused silica the explicit refraction index temperature dependence is −3 ϫ 10 −6 K −1 . 10 The implicit temperature dependence ͑due to the refraction index wavelength dependence dn / d and the laser wavelength shift d / dT͒ is even smaller: dn / d =4ϫ 10 −5 nm −1 , 10 leading to dn / dT = ͑dn / d͒͑d / dT͒ = 2.4ϫ 10 −7 K −1 . We propose to fix this problem by bending POI in accordance to the temperature change. We suppose that POI and the laser have the same temperature since they are close to each other. A simple bending scheme is absolutely passive and implies attaching to POI a second plate, having different thermal expansion coefficient ͑in mass production, the attachment may be done by lamination technology 11 ͒. The curvature of this bending is proportional to the temperature change ͑as long as the thermal expansion can be considered as linear with temperature͒. As long as the laser wavelen...

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“…Parameters defined in these well known equations are physical internal parameters in general not available. They are defined on Table 1 with their derivation kom system parameters [ 2 ] . With 7; is the current injection efficiency and I is the injected current.…”

Section: Vcsel Model Developmentmentioning

confidence: 99%

VHDL-AMS modeling of VCSEL including noise

Karray

Desgreys

Charlot

Proceedings of the 2003 IEEE International Workshop on Behavioral Modeling and Simulation

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This paper presents a VCSEL diode model including electrical, thermal and optical behaviors where noise is present in the rate equations. VHDL-AMs language is used to write this model. Langevin forces are introduced in equations and generated in Mentor Graphics ADVanceMp by white noise signal generators, using the UNIFORM statement. The comparison of transient results with Spice ones published in literature shows a good agreement.

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Multilevel behavioral simulation of VCSEL-based optoelectronic modules

Cited by 14 publications

References 16 publications

VCSEL Intrinsic Response Extraction Using $T$-Matrix Formalism

VCSEL Intrinsic Response Extraction Using $T$-Matrix Formalism

Mechanical means for temperature compensation of planar diffractive optical interconnects: feasibility study

VHDL-AMS modeling of VCSEL including noise

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