Multilayer Semiconductor Charged-Particle Spectrometers for Accelerator Experiments

Gurov, Yu. B.; Lapushkin, S. V.; Sandukovsky, V. G.; Chernyshev, B. A.

doi:10.1134/s106377961802003x

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2019

2024

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Cited by 2 publications

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“…After that, the lithium ions returning to the p-n junction begin to move from the n-side of the junction to the p-side, where they compensate for the acceptor atoms of the p-material. [7] Calculations for the thickness obtained as a result of the drift of the impoverished layer give the following formula:…”

Section: Resultsmentioning

confidence: 99%

Technological and Electrophysical Characteristics of Receiving Detectors Based on SI(Li), SI (Au) Structures With Scintilator Semiconductor

2024

Preprint

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The scientific significance of the research results is that new technological processes for the preparation of semiconductor detectors based on the Si(Li) p-i-n structure with nuclear radiation were seen and their electrophysical characteristics were determined. Such results are explained by the fact that they are of great importance in the practical application of various semiconductor devices. The practical significance of the research results is the development and implementation of Si(Li) p-i-n structural detectors based on semiconductor monocrystalline silicon.

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Section: Resultsmentioning

confidence: 99%

Technological and Electrophysical Characteristics of Receiving Detectors Based on SI(Li), SI (Au) Structures With Scintilator Semiconductor

2024

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Spectroscopy of ⁷He in the reactions of stopped pion absorption by ^12,14C nuclei

Chernyshev

Gurov

Lapushkin

et al. 2019

J. Phys.: Conf. Ser.

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The production of the 7He states was studied in the reactions of stopped pion absorption by carbon isotopes: 12C(π−, p4He)7He, 12C(π−, d3He)7He and 14C(π−, t4He)7He. Measurements were performed using two-arm multilayer semiconductor spectrometer. The ground and excited states were observed in all three reactions. Narrow (Γ < 2 M∍B) state with the high excitation energy ≈ 16 MeV was observed in the 14C(π−, t4He)7He reaction.

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Multilayer Semiconductor Charged-Particle Spectrometers for Accelerator Experiments

Cited by 2 publications

References 96 publications

Technological and Electrophysical Characteristics of Receiving Detectors Based on SI(Li), SI (Au) Structures With Scintilator Semiconductor

Technological and Electrophysical Characteristics of Receiving Detectors Based on SI(Li), SI (Au) Structures With Scintilator Semiconductor

Spectroscopy of ⁷He in the reactions of stopped pion absorption by ^12,14C nuclei

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Multilayer Semiconductor Charged-Particle Spectrometers for Accelerator Experiments

Cited by 2 publications

References 96 publications

Technological and Electrophysical Characteristics of Receiving Detectors Based on SI(Li), SI (Au) Structures With Scintilator Semiconductor

Technological and Electrophysical Characteristics of Receiving Detectors Based on SI(Li), SI (Au) Structures With Scintilator Semiconductor

Spectroscopy of 7He in the reactions of stopped pion absorption by 12,14C nuclei

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Spectroscopy of ⁷He in the reactions of stopped pion absorption by ^12,14C nuclei