Technological and Electrophysical Characteristics of Receiving Detectors Based on SI(Li), SI (Au) Structures With Scintilator Semiconductor

Abstract

The scientific significance of the research results is that new technological processes for the preparation of semiconductor detectors based on the Si(Li) p-i-n structure with nuclear radiation were seen and their electrophysical characteristics were determined. Such results are explained by the fact that they are of great importance in the practical application of various semiconductor devices. The practical significance of the research results is the development and implementation of Si(Li) p-i-n structural detectors based on semiconductor monocrystalline silicon.