2017
DOI: 10.1364/optica.4.000276
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Multifunctional metamaterial pyroelectric infrared detectors

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Cited by 117 publications
(69 citation statements)
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“…Thus, the device transmission can switch between two spectrally separate M‐IR bands. The active transmission control and dynamic band‐selectivity in the structure represents a distinct advantage over the current passive infrared plasmonic filters . Figure d shows the complex refractive index of a 65 nm thick monolithic GST film on a Si substrate for both the amorphous (blue line) and face‐centered cubic (FCC) crystalline (red line) states.…”
Section: Resultsmentioning
confidence: 99%
“…Thus, the device transmission can switch between two spectrally separate M‐IR bands. The active transmission control and dynamic band‐selectivity in the structure represents a distinct advantage over the current passive infrared plasmonic filters . Figure d shows the complex refractive index of a 65 nm thick monolithic GST film on a Si substrate for both the amorphous (blue line) and face‐centered cubic (FCC) crystalline (red line) states.…”
Section: Resultsmentioning
confidence: 99%
“…The emerging issue of greenhouse CO 2 emission is illustrated in Figure a for which massively deployable, CMOS compatible sensors are necessary. Conceptual integration of the hybrid metamaterial platform for CO 2 sensing with the state‐of‐the‐art NDIR system (Figure b) is presented in Figure c . Figure c shows the post‐CMOS integration of gas‐selective, enrichment layer (polyethylenimine, PEI).…”
Section: Hybrid Metamaterials Absorber Platformmentioning
confidence: 99%
“…10. The typical unit-cell and center wavelength for the state of the art mid-infrared metamaterial absorbers, fabricated using e-beam [22][23][24][25][29][30][31][32][33][34][35][36][37], standard UV [39][40][41][42][43], Deep UV (DUV) [21], and direct laser writing (DLW) [38] lithography methods. The metamaterial structure presented in this paper is also shown for comparison.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the level of masked lithography that is a standard part of the infrastructure of a MEMS cleanroom (masked UV (i-line) lithography) has been explored for mid-infrared absorber fabrication. Analyzing literature on mid-infrared metamaterial-based absorbers reveals that the dividing line between e-beam fabricated, versus mask-fabricated devices is at the longer wavelength part of the IR spectrum [39][40][41][42][43]. For a typical mid-infrared design based on the cross and split-ring resonators, a feature size of about 80 nm (at 1 μm) [34] up to 400 nm (at 6 μm) [22] is required, which is beyond the specifications of masked UV lithography.…”
Section: Cmos-compatibility Design In Mid-ir Metamaterials Absorbersmentioning
confidence: 99%