Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer

Nosaeva, Ksenia; Al-Sawaf, Thualfiqar; John, W.; Stoppel, D.; Rudolph, Matthias; Schmuckle, F.J.; Janke, B.; Krüger, Olaf; Krozer, Viktor; Heinrich, W.; Weimann, Nils

doi:10.1109/ted.2016.2533669

Cited by 17 publications

(6 citation statements)

References 16 publications

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“…Among all known materials, diamond has a record-high thermal conductivity of up to 24 W/cm•K at room temperature, reaching maximum values of up to 285 W/cm•K at temperatures near 63 K [1]. This makes diamond the material of choice for thermal management applications [2][3][4][5][6]. Solving thermal management problems is especially important for modern electronic devices, operating in extreme regimes, which makes diamond a highly used "cutting-edge" material in electronics [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD

et al. 2020

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In this work, the substrate holders of three principal geometries (flat, pocket, and pedestal) were designed based on E-field simulations. They were fabricated and then tested in microwave plasma-assisted chemical vapor deposition process with the purpose of the homogeneous growth of 100-μm-thick, low-stress polycrystalline diamond film over 2-inch Si substrates with a thickness of 0.35 mm. The effectiveness of each holder design was estimated by the criteria of the PCD film quality, its homogeneity, stress, and the curvature of the resulting “diamond-on-Si” plates. The structure and phase composition of the synthesized samples were studied with scanning electron microscopy and Raman spectroscopy, the curvature was measured using white light interferometry, and the thermal conductivity was measured using the laser flash technique. The proposed pedestal design of the substrate holder could reduce the stress of the thick PCD film down to 1.1–1.4 GPa, which resulted in an extremely low value of displacement for the resulting “diamond-on-Si” plate of Δh = 50 μm. The obtained results may be used for the improvement of already existing, and the design of the novel-type, MPCVD reactors aimed at the growth of large-area thick homogeneous PCD layers and plates for electronic applications.

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Section: Introductionmentioning

confidence: 99%

Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD

et al. 2020

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“…The transistors eventually experience self-heating induced degradation beyond certain voltages because of the lack of thermal management methods in the present work. Further improvements can be expected since various works demonstrate the improvement in the junction temperature and thermal resistance of InP HBTs when heat sinking or substrate transfer methods (with no changes in the epitaxial layer structure) are used [19], [20].…”

Section: Large-signal Performancementioning

confidence: 99%

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz

et al. 2022

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We report the 94 GHz large-signal load-pull performance of (0.3 × 9) μm 2 InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs) in the common-emitter (CE) and common-base (CB) configurations. Both configurations were implemented side-by-side on either 20-nm-thick graded GaAsSbor GaInAsSb-base layers. A measured record saturated output power P OUT,SAT = 14.5 dBm with a corresponding power density 10.4 mW/μm 2 were achieved in the GaInAsSb-base CB configuration. The performance follows from i) the higher power gain in the CB topology and, ii) the superior BV CEO and BV CBO breakdown voltages obtained with the quaternary base which allow degradation-free operation at higher voltages. Load-pull contours show a combination of high output power and power gain in the proximity of 50 for a wide range of load impedances. In contrast, CB InP/GaAsSb DHBTs deliver P OUT,SAT = 10.6 dBm and 4.3 mW/μm 2 . For all devices considered here, CB operation improves transistor robustness against high-power device degradation. The present work provides the first report on the power performance of quaternary InP/GaInAsSb DHBTs in CE/CB topologies, with comparison to ternary InP/GaAsSb DHBTs.INDEX TERMS InP/Ga(In)AsSb, double heterojunction bipolar transistors (DHBTs), common-emitter (CE), common-base (CB), load-pull measurements, maximum output power, power gain, power density.This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.

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“…The thermal implications of removing the InP substrate have been recognized before [6], [12], also when employing an InP/GaAsSb structure [13]: whereas the heat is dissipated cylindrically in the substrate under a triple-mesa device, the only heat extraction path in a transferred-substrate HBT is through the collector and emitter contacts. It can be reduced with additional heat sinking [6], [13], [14].…”

Section: A DC Datamentioning

confidence: 99%

Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With <inline-formula> <tex-math notation="LaTeX">${f}_{\text{max}}$ </tex-math> </inline-formula> ~ 0.53 THz

Weimann

Johansen

Stoppel

et al. 2018

IEEE Trans. Electron Devices

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We report on the realization of transferredsubstrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-µm-wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies. Index Terms-Gallium arsenide antimonide, heterojunction bipolar transistors, indium phosphide, millimeterwave (mm-wave) integrated circuits, submillimeter-wave (sub-mm-wave) integrated circuits.

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Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer

Cited by 17 publications

References 16 publications

Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD

Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz

Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With <inline-formula> <tex-math notation="LaTeX">${f}_{\text{max}}$ </tex-math> </inline-formula> ~ 0.53 THz

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Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer

Cited by 17 publications

References 16 publications

Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD

Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm2 Power Density at 94 GHz

Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With <inline-formula> <tex-math notation="LaTeX">${f}_{\text{max}}$ </tex-math> </inline-formula> ~ 0.53 THz

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High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz