Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials

Abstract

Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and magnetic materials, with interfacial coupling between electric polarization and magnetization, through the exchange of elastic, electric, and magnetic energy. Although the nature of the interfaces remains to be unraveled, such cross coupling can be utilized to manipulate the magnetization (or polarization) with an electric (or magnetic) field, known as a converse (or direct) magnetoelectric effect. It can be exploited to significantly improve the performance of or/and add new functionalities to many existing or emerging devices such as memory devices, tunable microwave devices, sensors, etc. The exciting technological potential, along with the rich physical phenomena at the interface, has sparked intensive research on multiferroic heterostructures for more than a decade. Here, we summarize the most recent progresses in the fundamental principles and potential applications of the interface-based magnetoelectric effect in multiferroic heterostructures, and present our perspectives on some key issues that require further study in order to realize their practical device applications.

Understanding and designing magnetoelectric heterostructures guided by computation: progresses, remaining questions, and perspectives

“…Detailed discussions on such strain-mediated converse magnetoelectric coupling can be found in a recent review. 12 Experimental studies on such strain transfer mediated converse magnetoelectric coupling are extensive, and the strength of such coupling can be strong, e.g., a strain-generated effective magnetic field exceedng 3000 Oe has been observed in some magnetoelectric heterostructures. 46 However, a strain typically cannot switch the polarity of a magnetization vector by 180°because a strain cannot break the time-reversal symmetry.…”

Electrically controlled non-volatile switching of magnetism in multiferroic heterostructures via engineered ferroelastic domain states

“…[1][2][3][4][5][6][7][8][9][10] Multiferroic heterostructures, simultaneously exhibiting ferromagnetism, ferroelectricity and ferroelasticity, have attracted great interest due to the strong strainmediated magnetoelectric (ME) coupling and shown promising applications for tunable magnetic devices. [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] More interestingly, in these structures, a single control parameter of voltage is used to induce a lattice strain through the converse piezoelectric effect in the ferroelectric phase, which in turn tailors the magnetic properties in the mechanically coupled magnetic phase through the magnetoelastic effect. 25,[30][31][32][33][34][35][36][37][38][39][40][41] Thus, devices made of such heterostructures are ultrafast, compact, quiet, energy efficient and susceptible to be integrated into electronic circuits.…”

Механизмы Поглощения Терагерцового И Инфракрасного Излучения В Пленках PZT

“…Особое место занимают исследования пленочных образцов различной толщины и морфологии. Пленки PZT в составе многослойных гетероструктур нашли применение в элементах сегнетоэлектрической памяти FeRAM [5,6], пьезоэлектрических микроэлектромехани-ческих системах MEMS [7,8], пьезоэлектрических тран-зисторах [9], пироприемниках [10], энергосберегающих устройствах [11], устройствах на основе эффекта магни-тострикции [12][13][14].…”