Multicusp sources for ion beam lithography applications

Leung, K. N.

doi:10.1116/1.588032

Cited by 9 publications

(2 citation statements)

References 3 publications

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“…H -ions are formed in the extraction region. Since the plasma potential gradient in this region is small, the H -ion energy spread is expected to be lower than that of the positive ions [10].…”

Section: Magnetic Energy Analyzermentioning

confidence: 99%

Very-low-energy-spread ion sources

Lee

Proceedings of the 1997 Particle Accelerator Conference (Cat. No.97CH36167)

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Axial ion energy spread of multicusp sources has been measured by three different techniques: an electrostatic energy analyzer for plasma ion measurement at the source exit; a magnetic deflection spectrometer; and a retarding-field energy analyzer for measurement of the accelerated beam. By introducing a magnetic filter inside the multicusp source chamber, it is shown that the energy spread of positive hydrogen ions can be reduced to approximately 1eV. The energy-spread values for H -ions are lower. New ion source configurations are now being investigated to further reduce the ion energy spread to below 1 eV and maximize source performance reliability and lifetime.

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Section: Magnetic Energy Analyzermentioning

confidence: 99%

Very-low-energy-spread ion sources

Lee

Proceedings of the 1997 Particle Accelerator Conference (Cat. No.97CH36167)

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“…Volume plasma sources [8] in various configurations are the most common and are used in ion milling machines, ion implanters, and other ion accelerators. In these sources the desired species is introduced as a gas, and electron bombardment is used to ionize it.…”

Section: Volume Plasma Sourcesmentioning

confidence: 99%

Ion sources for nanofabrication and high resolution lithography

Melngailis

PACS2001. Proceedings of the 2001 Particle Accelerator Conference (Cat. No.01CH37268)

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Ion sources that are used to produce nanometer resolution patterns directly on the substrate are either point sources or volume plasma sources. The point sources are used in focused ion beam systems which focus an image of the point on the sample. These sources are, in practice gallium liquid metal. Other sources, such as gas field ion sources, are also being considered. Volume plasma sources are used with ion projection, where instead of the image of a point source, the image of a "back illuminated" stencil mask is projected on the substrate. The operation, application, and characteristics of the three types of sources are reviewed and compared.

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