Multibit Operation of $\hbox{TiO}_{x}$ -Based ReRAM by Schottky Barrier Height Engineering

Abstract

We demonstrated multibit operation using a 250-nm Ir/TiO x /TiN resistive random access memory by Schottky barrier height engineering. A Schottky barrier was formed by the interface between a high-work-function Ir top electrode and n-type TiO x . The conducting path, which was composed of oxygen vacancies, was generated in a low-resistance state, whereas a Schottky barrier was reproduced in a high-resistance state (HRS) due to the high concentration of oxygen by the electric field. By changing the reset operation voltage, we successfully engineered the Schottky barrier height, resulting in the modulation of the HRS current and demonstrating the feasibility of multibit applications.Index Terms-Resistive random access memory (ReRAM), RRAM, Schottky barrier height modulation.

High performance sol–gel spin-coated titanium dioxide dielectric based MOS structures

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Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates

“…Initially, the devices are found in a highly insulating pristine state: the forming step makes the formation of oxygen ions possible. The vacancies start to drift due to the external electric field that leads to the vacancies accumulation [44][45][46] building up a small, confined and conductive region within the oxide layer, the conductive filament. The filament can connect the electrodes completely or partially.…”

Surface Functionalization of WO3 Thin Films with (3-Aminopropyl)triethoxysilane and Succinic Anhydride

“…Many publications have reported on the switching materials of Ó 2017 The Minerals, Metals & Materials Society binary oxides (SiO 2 , NiO, TiO 2 , CuO x , HfO 2 , ZrO x , ZnO, Nb 2 O 5 , Al 2 O 3 , WO x ). [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] In spite of the fact that little has been reported on memristor biosensors, memristive characteristics can be hired for biosensing. [2][3][4][5] The sensor transducer principle for memristive biosensor can be described as follows: the surface-functionalized memristor shows different positions of the current minima for voltage increasing (forward) and decreasing (backward) regimes, unlike the bare nanomaterials (nanowires) that show small voltage gap values in the hysteresis loops.…”