High performance sol–gel spin-coated titanium dioxide dielectric based MOS structures

Spin Coating Immobilisation of C-N-TiO2 Co-Doped Nano Catalyst on Glass and Application for Photocatalysis or as Electron Transporting Layer for Perovskite Solar Cells

“…The effect of spin speed on photocatalytic activity thin films has extensively been reported in the literature, though different results were obtained [55,56]. Extensive investigations on the sol-gel spin coating of doped TiO 2 films on glass were reported [24,57]. The impact of viscosity on the photocatalytic activity of the films was also highlighted by Zabihi et al [38] and Pérez et al [69].…”

“…Various authors endorsed that the immobilization of a catalyst on transparent supports such as glass using spin and spread coating was identified as an alternative cost-effective route for catalyst coating [55,56]. That is, a controllable affinity between catalyst and glass supports was observed even though the limitations of catalysts coated on the glass are still under investigation [24,57]. Nevertheless, the effect of common factors mainly the rotation speed, the sol-gel to solvent volume ratio, and the evaporation rate to some extent on the thickness of the fabricated films and TiO 2 content are still being investigated [58,59].…”

“…Likewise, the sol-gel procedure was considered as a suitable coating technique because it offers benefits such as composition controllability and the use of low-cost equipment. Preparation of films with a large surface area and high photocatalytic activity offer the possibility to engineer excellent homogenous nano-thin films of desired layers [19,23,24]. Modified TiO 2 nano composites were used as coating layers on various supports and exceptional results have been achieved.…”

Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer

“…The ALPO devices show a leakage current density of ∼4.5×10 −8 A.cm −2 only at -1 MV.cm −1 electric field. Such low leakage current not only meets the criteria for the application of high-performance flash memory devices, but also outperforms other solution processed inorganic dielectrics namely Al 2 O 3 [24], HfO 2 [25], ZrO 2 [26], and TiO 2 [27], which show typical leakage currents ∼10 −5 A.cm −2 , ∼10 −7 A.cm −2 , ∼10 −2 A.cm −2 and ∼10 −5 A.cm −2 respectively at 1 MV cm −1 . This observation for ALPO also ensures that high quality flash memory devices can be fabricated without the need of blocking or tunneling layers.…”

“…Alternate high-k dielectrics such as TiO 2 , HfO 2 , ZrO 2 , etc. are excellent insulators for transistor applications [24][25][26][27], but do not have the intrinsic charge trapping properties as silicon nitride. Although solution processed HfO 2 has been used to fabricate SONOS type flash memory [1], the devices required the support of additional dielectric layers which were deposited by sophisticated ultrahigh vacuum techniques with high temperature processing steps to improve the memory leakage.…”