Multi‐wavelength quantum cascade laser arrays

Rauter, Patrick; Capasso, Federico

doi:10.1002/lpor.201500095

Cited by 51 publications

(37 citation statements)

References 103 publications

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“…Due to the presence of many molecular "finger-print" absorption features in this spectral region, a simultaneous coverage of this range will enable the parallel detection and identification of a vast number of chemicals [1,2]. This wavelength range can be covered by numerous different schemes, each with their own strengths and weaknesses in terms of complexity, simultaneous bandwidth, power, efficiency, and pulse durations [3][4][5][6][7][8]. Yet, the most popular method of coherent broadband MIR generation remains nonlinear downconversion from the nearinfrared-a spectral region where many high-power driving lasers are available [4,7,[9][10][11][12][13][14][15][16][17][18].…”

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confidence: 99%

Intra-pulse difference-frequency generation of mid-infrared (27–20 μm) by random quasi-phase-matching

et al. 2019

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We present a mid-infrared (MIR) source based on intrapulse difference-frequency generation under the random quasi-phase-matching condition. The scheme enables the use of non-birefringent materials whose crystal orientations are not perfectly and periodically poled, widening the choice of media for nonlinear frequency conversion. With a 2 μm driving source based on a Ho:YAG thin-disk laser, together with a polycrystalline ZnSe element, an octavespanning MIR continuum (2.7-20 μm) was generated. At over 20 mW, the average power is comparable to regular phase-matching in birefringent crystals. A 1 μm laser system based on a Yb:YAG thin-disk laser was also tested as a driving source in this scheme. The new approach provides a simplified way for generating coherent MIR radiation with an ultrabroad bandwidth at reasonable efficiency.

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confidence: 99%

Intra-pulse difference-frequency generation of mid-infrared (27–20 μm) by random quasi-phase-matching

et al. 2019

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“…These lasers have been proven to be suitable for carbon monoxide gas detection using direct absorption spectroscopy, but the tuning range (by changing the driven current) of a single device is limited to 2 nm. The development of widely tunable silicon photonics laser sources in the 2-3 μm range enable to simultaneously detect several gases or broad absorption features of bio-molecules on a compact chip [17,18].Mid-infrared DFB laser arrays have been realized on a III-V substrate at wavelengths beyond 4 μm based on quantum cascade structures [19]. These arrays attract great interest for gas sensing applications [20].…”

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confidence: 99%

“…Mid-infrared DFB laser arrays have been realized on a III-V substrate at wavelengths beyond 4 μm based on quantum cascade structures [19]. These arrays attract great interest for gas sensing applications [20].…”

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Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Wang¹,

Sprengel²,

Boehm³

et al. 2017

Optica

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Silicon photonics is a promising integrated-optics platform for optical communication and sensing applications. Integrating 2-3 μm wavelength widely tunable lasers on silicon photonic integrated circuits enables fully integrated spectroscopic sensors with different potential applications such as multi-species trace gas spectroscopy and bio-molecule detection. Here, we demonstrate a continuous-wave (CW) operated III-V-on-silicon distributed feedback (DFB) laser array covered a broad wavelength range from 2.28 to 2.43 μm. CW operation up to 25°C and an on-chip output power of 2.7 mW in a single mode at 5°C is achieved for lasers operating at 2.35 μm wavelength. Four-channel DFB laser arrays with a continuous tuning range of 10 nm and side mode suppression ratio of 40 dB over the whole range are also presented. This work is a major advance toward chip-scale silicon photonics spectroscopic sensing systems. Gas sensing based on short-wave infrared and mid-infrared absorption spectroscopy has been proven to be a reliable technology for trace-gas measurements with fast response time and a high degree of specificity to the target gas [1,2]. However, most present optical sensors consist of discrete optical components and a bulk gas cell, which limits their viability for applications in portable and economical gas analysis. Integrated photonics platforms offer the potential to realize miniature and low-cost optical gas sensors [3][4][5][6]. As one of the most promising integrated photonics platforms, silicon photonics has been well-developed for optical communication applications during the past decade [7]. In recent years, its applications have been extended to sensing applications, including on-chip spectroscopic sensing [8]. Silicon photonics gas sensors that target different components have been demonstrated, including those that use, e.g., microring resonators [9,10] or spiral waveguides [11] to interact with the gas medium. In these gas sensors, the light from an external laser source is coupled into the silicon chip for the on-chip absorption spectroscopy measurement. The development of fully integrated silicon photonic integrated circuits (PICs) in the 2.3 μm wavelength range enable compact gas sensors with high sensitivity, since many important industrial gases (e.g., NH 3 , CO, and CH 4 ) have strong absorption lines in this wavelength range [12]. It is also valuable for bio-sensing applications, such as non-invasive blood glucose measurements [8,13]. For a compact silicon photonics spectroscopic gas sensor, an integrated and tunable single-mode laser is the key component that should be developed. Recently, heterogeneously integrated III-V-on-silicon Fabry-Perot lasers around 2 μm were realized using strained InGaAs Type I heterostructures [14]. However, the emission wavelength range of laser sources based on the InP-based Type I material is limited to around 2.3 μm [15]. Recently, we demonstrated 2.3x μm heterogeneous III-Von-silicon distributed feedback (DFB) laser sources based on an InP-based Type II heteros...

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“…8,9 The spectral coverage obtainable with a single quantum cascade laser (QCL) chip has significantly improved over the past few years. [10][11][12] Ever-increasing coverage increases molecular specificity by enabling the acquisition of more of the characteristic spectral fingerprint and increases instrument utility by making it sensitive to a larger range of molecules. External cavity configurations with wavelength-selective feedback are the most common approaches to exploit the full tuning range provided by the QCL chip.…”

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confidence: 99%

Microoptoelectromechanical systems-based external cavity quantum cascade lasers for real-time spectroscopy

et al. 2017

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, "Microoptoelectromechanical systems-based external cavity quantum cascade lasers for real-time spectroscopy," Opt. Eng. 57(1), 011010 (2017), doi: 10.1117/1.OE.57.1.011010. Abstract. We report on mid-IR spectroscopic measurements performed with rapidly tunable external cavity quantum cascade lasers (EC-QCLs). Fast wavelength tuning in the external cavity is realized by a microoptoelectromechanical systems (MOEMS) grating oscillating at a resonance frequency of about 1 kHz with a deflection amplitude of up to 10 deg. The entire spectral range of the broadband QCL can therefore be covered in just 500 μs, paving the way for real-time spectroscopy in the mid-IR region. In addition to its use in spectroscopic measurements conducted in backscattering and transmission geometry, the MOEMS-based laser source is characterized regarding pulse intensity noise, wavelength reproducibility, and spectral resolution. © The Authors.Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Multi‐wavelength quantum cascade laser arrays

Cited by 51 publications

References 103 publications

Intra-pulse difference-frequency generation of mid-infrared (27–20 μm) by random quasi-phase-matching

Intra-pulse difference-frequency generation of mid-infrared (27–20 μm) by random quasi-phase-matching

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Microoptoelectromechanical systems-based external cavity quantum cascade lasers for real-time spectroscopy

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