Multi-trench-gate Cell Concept for Low Voltage Superjunction Power MOSFETs

Eikyu, K.; Sakai, Atsushi; Yamashita, Takahiro; Shimomura, A.; Yanagigawa, H.; Mori, K.

doi:10.1109/ispsd46842.2020.9170038

Cited by 6 publications

(3 citation statements)

References 2 publications

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“…The RS method is well known as a traditional optimization method [12], [13]. However, sometimes, the accuracy is scarified because of the simple regression model.…”

Section: Design Parameters and Algorithmmentioning

confidence: 99%

Zoomed Response Surface Method for Automatic Design in Parameters Optimization of Low-Voltage Power MOSFET

Saito

Nishizawa

2022

IEEE J. Electron Devices Soc.

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A new parameter optimization method using zoomed response surface (RS) is proposed for automatic design of low-voltage power MOSFET. Low-voltage MOSFET characteristics have been improved continuously considering with not only low power loss but also low cost to answer request to high-performance system. Complicated requirements lead long development schedule and low yield. Model-based design and machine learning are prospective method to answer the problem. However, reported methods require many simulation numbers (> 1000) for training to obtain high accuracy, and it is difficult to optimize parameters considering the process margin at the same time. This article shows a simple design method using zoomed RS. Five parameters were automatically designed, taking account to process margin with simulation number of 130 only.INDEX TERMS Field plate, power MOSFET, on-resistance, automatic design.

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“…The RS method is well known as a traditional optimization method [12], [13]. However, sometimes, the accuracy is scarified because of the simple regression model.…”

Section: Design Parameters and Algorithmmentioning

confidence: 99%

Zoomed Response Surface Method for Automatic Design in Parameters Optimization of Low-Voltage Power MOSFET

Saito

Nishizawa

2022

IEEE J. Electron Devices Soc.

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“…The response surface (RS) method is well known as a traditional optimization method. 26,27) However, sometimes, accuracy is sacrificed because of the simple regression model. To address this drawback, the use of a zoomed RS method is effective, 28) because high accuracy in automatic optimization design is required only around the optimum point.…”

Section: Introductionmentioning

confidence: 99%

Automatic total performance design of low-voltage power MOSFETs using zoomed response surface method

Saito

2023

Jpn. J. Appl. Phys.

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As a simple design method, zoomed response surface (RS) method is useful for automatic design of low-voltage power MOSFETs. Low-voltage MOSFET characteristics have been improved continuously considering with not only low power loss but also low cost to answer request to high-performance system. Complicated requirements lead long development schedule and low yield. Model-based design and machine learning are prospective method to answer the problem. However, reported methods require many simulation numbers (>1000) for training to obtain high accuracy, and it is difficult to optimize parameters considering the process margin at the same time. This article shows a demonstration of zoomed RS method for automatic design of 100 V-class power MOSFETs. Five parameters were automatically designed for not only minimizing on-resistance but also minimizing total power loss, taking into account process margin and switching noise with simulation number of 130 only.

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“…The large amount of the nonequilibrium carriers' stored charge (Q rr ) and the extremely fast reverse recovery current change rate (d i /d t ) limit the application of the SJ MOSFET in high-frequency inductive circuits [4]. Moreover, the trench etch backfilling (TEB) and multilayer epitaxial deposition (MED) are two commonly used processes for fabricating the pillar region of the SJ MOSFET [5,6]. The TEB process can build a more uniform N/Ppillar morphology, which realizes a better trade-off between the BV and R on,sp of the SJ MOSFET [7].…”

Section: Introductionmentioning

confidence: 99%

Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile

Liu

Tan

et al. 2023

Electronics

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This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble can be adjusted by designing different doping profiles to adjust the resistance of the upper half P-pillar. A higher P-pillar resistance can slow down the sweep out speed of hole carriers when the body diode is turned off, thus resulting in a smoother reverse recovery current and reducing the current recovery rate (dir/dt) from a peak to zero. The simulation results show that the reverse recovery peak current (Irrm) of the two proposed devices decreased by 5% and 3%, respectively, compared to the conventional SJ. Additionally, the softness factor (S) increased by 64% and 55%, respectively. Furthermore, this study also demonstrates a trade-off relationship between static and reverse recovery characteristics with the adjustable doping profile, thus providing a guideline for actual application scenarios.

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Multi-trench-gate Cell Concept for Low Voltage Superjunction Power MOSFETs

Cited by 6 publications

References 2 publications

Zoomed Response Surface Method for Automatic Design in Parameters Optimization of Low-Voltage Power MOSFET

Zoomed Response Surface Method for Automatic Design in Parameters Optimization of Low-Voltage Power MOSFET

Automatic total performance design of low-voltage power MOSFETs using zoomed response surface method

Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile

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