Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors

Kim, J. O.; Sengupta, Sourav; Barve, Ajit V.; Sharma, Yashika; Adhikary, Sourav; Lee, S. J.; Noh, Sam Kyu; Allen, Mark; Allen, J. W.; Chakrabarti, Subhananda; Krishna, S.

doi:10.1063/1.4774383

Cited by 76 publications

(46 citation statements)

References 22 publications

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“…As is shown in Fig.1 (b), the QDs are aligned along [1][2][3][4][5][6][7][8][9][10] , whereas the size on both directions are similar on multiple stack samples. The distance between QDs also varies with stack number.…”

Section: Morphologymentioning

confidence: 99%

“…Semiconductors III-V QDs are crystalline nano objects that are attractive for a wide range of detection related applications particularly in QD laser 1 , near infrared region (NIR) 2 and high efficiency solar cells 3 . These nanostructures are typically grown by Molecular Beam Epitaxy (MBE) using the Stranski-Krastanow (SK) growth mechanism 4 and their small size give them interesting tunability.…”

Section: Introductionmentioning

confidence: 99%

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Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

Xu¹,

Jaffré²,

Alvarez³

et al. 2015

AIP Conference Proceedings

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Section: Morphologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

Xu¹,

Jaffré²,

Alvarez³

et al. 2015

AIP Conference Proceedings

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“…1 demonstrating straindriven vertical self-organization of InAs/GaAs quantum dots in which the vertically correlated quantum dot layers (QDLs) aligned along the growth axis to form quantum dot stacks (QDSs), such nano-structures have been a topic of extensive research due to their promising electronic and optical properties for implementing several optoelectronic devices such as semiconductor optical amplifiers (SOAs) [2][3][4][5][6][7] , lasers diodes 8,9 , infrared photo-detector 10 , high efficiency intermediate-band solar cells (IBSC) 11,12 , etc. Conventionally the strongly coupled QDSs grow in the growth direction with the constituent QDLs well aligned along the [001]-axis, and their theoretical understanding is well established in the literature 5,9,13-15 .…”

mentioning

confidence: 99%

Electronic and optical properties of [110]-tilted InAs/GaAs quantum dot stacks

Usman¹

2014

Phys. Rev. B

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Multi-million atom simulations are performed to study stacking-angle (θ) dependent strain profiles, electronic structure, and polarization-resolved optical modes from [110]-tilted quantum dot stacks (QDSs). Our calculations reveal highly asymmetrical biaxial strain distributions for the tilted QDSs that strongly influence the confinements of hole wave functions and thereby control the polarization response. The calculated values of degree of polarizations, in good agreement with the available experimental data, predict a unique property of the tilted QDSs that the isotropic polarization response can be realized from both [110] and [-110] cleaved-edges − a feature inaccessible from the conventional [001]-QDSs. Detailed investigations of polar plots further establish that tilting the QDSs provides an additional knob to fine tune their polarization properties. for the same number of QDLs in both stacks. Furthermore, a large rotation of PL polar plot peak was measured from the [-110] cleaved-edge surface leading to a discrepancy with the angle of tilt of the QDS. This appealed for a detailed understanding of the stacking-angle dependent electronic and optical properties to appropriately explain the experimental measurements. This work presents a first theoretical study of the tilted InAs QDSs by performing atomistic simulations of strain, electronic structure, and polarization-dependent inter-band optical transition strengths. The unique characteristics of the tilted QDSs are reported by highlighting highly asymmetrical biaxial strain distributions that regulate the electronic structure and polarization properties. It is predicted that by tilting the QDS, isotropic polarization response could be simultaneously realized from both [110] and [-110] cleaved- edge surfaces − a feature not accessible from the conventional [001]-aligned stacks [5][6][7] . The comparison of polar plots further revealed a high degree of control over the polarization properties attainable by tilting the QDSs, making it a useful tool for engineering the optical properties from the QD nano-structures.

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“…In our simulation, we model this active layer as an 1120 nm thick effective absorber whose anisotropic dielectric constants are taken from the literature. 28,29 We use the anisotropic dielectric constants to account for the different absorption efficiencies of QDs into x (or y) and z directions. The QD absorption covers the mid-IR range of 4-8 lm.…”

mentioning

confidence: 99%

Simulation and analysis of grating-integrated quantum dot infrared detectors for spectral response control and performance enhancement

Kim¹,

Ku²,

Krishna³

et al. 2014

Journal of Applied Physics

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High-speed >90% quantum-efficiency p-i-n photodiodes with a resonance wavelength adjustable in the 795-835 nm range Appl. Phys. Lett. 74, 1072Lett. 74, (1999 We propose and analyze a novel detector structure for pixel-level multispectral infrared imaging. More specifically, we investigate the device performance of a grating-integrated quantum dots-in-a-well photodetector under backside illumination. Our design uses 1-dimensional grating patterns fabricated directly on a semiconductor contact layer and, thus, adds a minimal amount of additional effort to conventional detector fabrication flows. We show that we can gain wide-range control of spectral response as well as large overall detection enhancement by adjusting grating parameters. For small grating periods, the spectral responsivity gradually changes with parameters. We explain this spectral tuning using the Fabry-Perot resonance and effective medium theory. For larger grating periods, the responsivity spectra get complicated due to increased diffraction into the active region, but we find that we can obtain large enhancement of the overall detector performance. In our design, the spectral tuning range can be larger than 1 lm, and, compared to the unpatterned detector, the detection enhancement can be greater than 92% and 148% for parallel and perpendicular polarizations. Our work can pave the way for practical, easy-to-fabricate detectors, which are highly useful for many infrared imaging applications. V C 2014 AIP Publishing LLC.[http://dx

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Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors

Cited by 76 publications

References 22 publications

Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

Electronic and optical properties of [110]-tilted InAs/GaAs quantum dot stacks

Simulation and analysis of grating-integrated quantum dot infrared detectors for spectral response control and performance enhancement

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