Multi-purposed Ar gas cluster ion beam processing for graphene engineering

Kim, Songkil; Ievlev, Anton V.; Jakowski, Jacek; Vlassiouk, Ivan; Sang, Xiahan; Brown, Chance; Dyck, Ondrej; Unocic, Raymond R.; Kalinin, Sergei V.; Belianinov, Alex; Sumpter, Bobby G.; Jesse, Stephen; Ovchinnikova, Olga S.

doi:10.1016/j.carbon.2018.01.098

Cited by 19 publications

(14 citation statements)

References 48 publications

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“…Heavier ions can be used to pattern 2D materials via a similar gas-assisted process or by simple sputtering. 125,126 Several promising demonstrations have shown that the sub-nanometer focused He + beam can be used to mill nanoscale structures into 2D films. 74,127,128 This should enable the study of quantum confinement in various 2D materials; however, the sputter yield is very low due to its relatively low mass and backscattered and recoil atoms can cause unintended damage in areas surrounding to the patterned region.…”

Section: Emerging Nanopattering and Lithographic Techniques Lateral Hmentioning

confidence: 99%

Emerging nanofabrication and quantum confinement techniques for 2D materials beyond graphene

2018

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Recent advances in growth techniques have enabled the synthesis of high-quality large area films of 2D materials beyond graphene. As a result, nanofabrication methods must be developed for high-resolution and precise processing of these atomically thin materials. These developments are critical both for the integration of 2D materials in complex, integrated circuitry, as well as the creation of sub-wavelength and quantum-confined nanostructures and devices which allow the study of novel physical phenomena. In this review, we summarize recent advances in post-synthesis nanopatterning and nanofabrication techniques of 2D materials which include (1) etching techniques, (2) atomic modification, and (3) emerging nanopatterning techniques. We detail novel phenomena and devices which have been enabled by the recent advancement in nanofabrication techniques and comment on future outlook of 2D materials beyond graphene.

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Section: Emerging Nanopattering and Lithographic Techniques Lateral Hmentioning

confidence: 99%

Emerging nanofabrication and quantum confinement techniques for 2D materials beyond graphene

2018

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“…Referencing the position of the O 2 and N 2 Raman bands 60 gives confidence that the shift in these peaks is due to changes in the samples and not measurement artifacts. PMMA can act as an electron acceptor to effectively dope the graphene layer; 29,61 therefore, the observation of a red shift in the peak position of the G-and 2D-peaks, also in Figure S3, with increasing etch time is a good indication of PMMA removal. 29 However, there are significant differences observed between the samples indicating this is more complex than just being due to residue removal alone.…”

Section: Resultsmentioning

confidence: 99%

Gas Cluster Ion Beam Cleaning of CVD-Grown Graphene for Use in Electronic Device Fabrication

Brennan

Centeno

Zurutuza

et al. 2021

ACS Appl. Nano Mater.

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One of the major challenges in the realization of electronic devices consisting of 2D materials produced using chemical vapor deposition (CVD) is the transfer of the 2D material from the growth catalyst to a relevant support material. However, the current steps of removing contamination from the transfer process is rarely fully effective with trace PMMA residue usually remaining. In this study, we explore the use of size selected argon gas clusters to clean polymer residue from CVD-grown commercial graphene samples. The energy per Ar atom can be tuned to <0.5 eV/atom, significantly below the bond strength of the graphene but sufficiently energetic to remove polymer material. Two of the primary techniques for characterizing the quality of graphene materials in terms of both chemical properties and physical properties are X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, respectively. However, these are typically ex situ measurements and results can be heavily influenced by exposure of the samples to atmospheric conditions prior to measurement. However, by in situ monitoring the cleaning process through the use of a combined XPS and Raman spectroscopy system, coupled with an argon gas cluster ion beam (GCIB) and capable of carrying out each measurement simultaneously, this allows us to explore in detail any modifications to the graphene layer during the GCIB cleaning process. This investigation is further enhanced with additional time-of-flight secondary ion mass spectrometry (ToF-SIMS) imaging. Both the presence and removal of surface contamination is shown, and the level of defects being introduced into the graphene layer, as a result of the sputtering process, is monitored in real-time. We show that by keeping the energy per argon atom less than 1 eV, we can prevent the introduction of defects to the graphene layer, as well as efficiently remove contamination present on the graphene surface.

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“…During contact with the target's surface, cluster ions interact with many surface atoms simultaneously, and transfer high energy to a very small region, thus creating damaged areas and pores [37][38][39][40][41]. Experimental investigations, including the GCIB irradiation of argon, have been performed so far Membranes 2022, 12, 27 2 of 11 on suspended and supported monolayer graphene [42]; however, to date, no experimental studies have been carried out on multilayer graphene (MLG).…”

Section: Introductionmentioning

confidence: 99%

“…There are numerous papers with computer simulation results for the bombardment of graphene by gas cluster projectiles, with various kinetic energies and sizes [43][44][45]. Kim et al [42] considered the cleaning, defect engineering and nanopore milling of suspended graphene with argon clusters. M. Gołu ński et al [44] proposed C60 and Ar projectiles for the controlled perforation of graphene.…”

Section: Introductionmentioning

confidence: 99%

Crosslinking Multilayer Graphene by Gas Cluster Ion Bombardment

et al. 2021

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In this paper, we demonstrate a new, highly efficient method of crosslinking multilayer graphene, and create nanopores in it by its irradiation with low-energy argon cluster ions. Irradiation was performed by argon cluster ions with an acceleration energy E ≈ 30 keV, and total fluence of argon cluster ions ranging from 1 × 109 to 1 × 1014 ions/cm2. The results of the bombardment were observed by the direct examination of traces of argon-cluster penetration in multilayer graphene, using high-resolution transmission electron microscopy. Further image processing revealed an average pore diameter of approximately 3 nm, with the predominant size corresponding to 2 nm. We anticipate that a controlled cross-linking process in multilayer graphene can be achieved by appropriately varying irradiation energy, dose, and type of clusters. We believe that this method is very promising for modulating the properties of multilayer graphene, and opens new possibilities for creating three-dimensional nanomaterials.

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Multi-purposed Ar gas cluster ion beam processing for graphene engineering

Cited by 19 publications

References 48 publications

Emerging nanofabrication and quantum confinement techniques for 2D materials beyond graphene

Emerging nanofabrication and quantum confinement techniques for 2D materials beyond graphene

Gas Cluster Ion Beam Cleaning of CVD-Grown Graphene for Use in Electronic Device Fabrication

Crosslinking Multilayer Graphene by Gas Cluster Ion Bombardment

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