Emerging nanofabrication and quantum confinement techniques for 2D materials beyond graphene

Stanford, Michael G.; Rack, Philip D.; Jariwala, Deep

doi:10.1038/s41699-018-0065-3

Cited by 137 publications

(117 citation statements)

References 162 publications

(211 reference statements)

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“…Engineering the structure and morphology of atomically thin layers (2D materials) is receiving tremendous attention due to both fundamental and applied interest . The quantum confinement effects can yield drastic and unprecedented changes in the physical properties of 2D layers . It is found that the nature and the position of Dirac cone in graphene, the indirect‐to‐direct bandgap transition, and the spin–orbit coupling of transition metal dichalcogenides (TMDs) are tunable by controlling the morphology.…”

Section: Comparison Of Tafel Slopes Of Triangles and Dendritesmentioning

confidence: 99%

“…[1] The quantum confinement effects can yield drastic and unprecedented changes in the physical properties of 2D layers. [2] It is found that the nature and the position of Dirac cone in graphene, [3] the indirect-to-direct bandgap transition, [4] and the spin-orbit coupling of transition metal dichalcogenides (TMDs) [5] are tunable by controlling the morphology. Through this, structure and morphology control of TMDs can have high impact on their electronic, [6] optical, [7] and photo-/electrocatalytic properties.…”

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confidence: 99%

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On the Synthesis of Morphology‐Controlled Transition Metal Dichalcogenides via Chemical Vapor Deposition for Electrochemical Hydrogen Generation

Sharma

Sahoo

Rastogi

et al. 2019

Physica Rapid Research Ltrs

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Shape‐engineered atomically thin transition metal dichalcogenide (TMD) crystals are highly intriguing systems with regard to both fundamental and applied science. Herein, a chemical vapor deposition‐assisted generalized synthesis strategy for the triangular‐ and dendritic‐shaped TMDs and their ternary alloys is proposed, and the TMD structures' potential for electrocatalytic hydrogen evolution reaction (HER) applications is demonstrated. The alloy formation is confirmed via micro‐Raman and photoluminescence studies and further verified using transmission electron microscopy and X‐ray photoelectron spectroscopy. The HER activities of MoS2 and MoSe2 triangles are compared with those of their dendritic structures, and an enormous improvement in terms of overpotential and current density is observed for the dendritic structures. A further enhancement of the HER activity is observed in MoS2(1−x)Se2x triangular and dendritic structures, with dendritic MoS2(1−x)Se2x providing the best activity. The demonstrated nonequilibrium growth technique opens new avenues for the synthesis of morphology‐controlled, large area, complex, and atomically thin TMD structures, which can have unprecedented properties, such as the enormous catalytic activity, tunable luminescence, etc., as presented in this article.

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Section: Comparison Of Tafel Slopes Of Triangles and Dendritesmentioning

confidence: 99%

mentioning

confidence: 99%

On the Synthesis of Morphology‐Controlled Transition Metal Dichalcogenides via Chemical Vapor Deposition for Electrochemical Hydrogen Generation

Sharma

Sahoo

Rastogi

et al. 2019

Physica Rapid Research Ltrs

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“…10,11 Defects can strongly influence the electronic properties of MoS 2 . 12,13 Atomic vacancies, interstitials, and grain boundaries have been extensively studied in MoS 2 . Of particular relevance to this work, sulfur vacancies are generally present in single-layer MoS 2 upon synthesis, 14 and they can be induced by processes such as ion beam exposure, [15][16][17][18][19] plasma exposure, [20][21][22][23][24][25] and annealing, 26 to name a few.…”

Section: Introductionmentioning

confidence: 99%

Lithographically patterned metallic conduction in single-layer MoS2 via plasma processing

et al. 2019

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Tailoring the electrical transport properties of two-dimensional transition metal dichalcogenides can enable the formation of atomically thin circuits. In this work, cyclic hydrogen and oxygen plasma exposures are utilized to introduce defects and oxidize MoS 2 in a controlled manner. This results in the formation of sub-stochiometric MoO 3−x , which transforms the semiconducting behavior to metallic conduction. To demonstrate functionality, single flakes of MoS 2 were lithographically oxidized using electron beam lithography and subsequent plasma exposures. This enabled the formation of atomically thin inverters from a single flake of MoS 2 , which represents an advancement toward atomically thin circuitry.

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“…Third, the functionalization is reversible and amenable to nanofabrication allowing patterning via conventional lithography or tip‐based nanofabrication like heating or friction . Bringing these capabilities together, the combination of patterning and tailoring compound 2D materials are critical to creating 2D integrated systems such as atomically thin electronic circuits, lab‐on‐a‐chip (LOC), and chemically patterned nanotemplates for future transparent, wearable, flexible, and stretchable technologies.…”

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confidence: 99%

Tailoring Surface Properties via Functionalized Hydrofluorinated Graphene Compounds

et al. 2019

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A new compound material of 2D hydrofluorinated graphene (HFG) is demonstrated whose relative hydrogen/fluorine concentrations can be tailored between the extremes of either hydrogenated graphene (HG) and fluorinated graphene (FG). The material is fabricated through subsequent exposures to indirect hydrogen plasma and xenon difluoride (XeF2). Controlling the relative concentration in the HFG compound enables tailoring of material properties between the extremes offered by the constituent materials and in‐plane patterning produces micrometer‐scale regions with different surface properties. The utility of the technique to tailor the surface wettability, surface friction, and electrical conductivity is demonstrated. HFG compounds display wettability between the extremes of pure FG with contact angle of 95° ± 5° and pure HG with contact angle of 42° ± 2°. Similarly, the HFG surface friction may be tailored between the two extremes. Finally, the HFG electrical conductivity tunes through five orders of magnitude when transitioning from FG to HG. When combined with simulation, the electrical measurements reveal the mechanism producing the compound to be a dynamic process of adatom desorption and replacement. This study opens a new class of 2D compound materials and innovative chemical patterning with applications for atomically thin 2D circuits consisting of chemically/electrically modulated regions.

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Emerging nanofabrication and quantum confinement techniques for 2D materials beyond graphene

Cited by 137 publications

References 162 publications

On the Synthesis of Morphology‐Controlled Transition Metal Dichalcogenides via Chemical Vapor Deposition for Electrochemical Hydrogen Generation

On the Synthesis of Morphology‐Controlled Transition Metal Dichalcogenides via Chemical Vapor Deposition for Electrochemical Hydrogen Generation

Lithographically patterned metallic conduction in single-layer MoS2 via plasma processing

Tailoring Surface Properties via Functionalized Hydrofluorinated Graphene Compounds

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