Multi-Port High Voltage Gain Modular Power Converter for Offshore Wind Farms

Song, Sen; Hu, Yihua; Ni, Kai; Yan, Joseph; Chen, Guipeng; Wen, Huiqing; Ye, Xianming

doi:10.3390/su10072176

Cited by 11 publications

(6 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These days, DC-DC power applications are widely explored in both low and high power applications [2][3][4]. These DC-DC converters are integrated with renewable energy sources (RESs), microgrids (MGs), high frequency (HF), high voltage direct current (HVDC) and electric vehicle (EV) like similar applications [5][6][7][8]. The driving element of these applications is mostly a MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Parameter extraction and selection for a scalable N-type SiC MOSFETs model and characteristic verification along with conventional dc-dc buck converter integration

et al. 2023

View full text Add to dashboard Cite

Most silicon carbide (SiC) MOSFET models are application-specific. These are already defined by the manufacturers and their parameters are mostly partially accessible due to restrictions. The desired characteristic of any SiC model becomes highly important if an individual wants to visualize the impact of changing intrinsic parameters as well. Also, it requires a model prior knowledge to vary these parameters accordingly. This paper proposes the parameter extraction and its selection for Silicon Carbide (SiC) power N-MOSFET model in a unique way. The extracted parameters are verified through practical implementation with a small-scale high power DC-DC 5 to 2.5 output voltage buck converter using both hardware and software emphasis. The parameters extracted using the proposed method are also tested to verify the static and dynamic characteristics of SiC MOSFET. These parameters include intrinsic, junction and overlapping capacitance. The parameters thus extracted for the SiC MOSFET are analyzed by device performance. This includes input, output transfer characteristics and transient delays under different temperature conditions and loading capabilities. The simulation and experimental results show that the parameters are highly accurate. With its development, researchers will be able to simulate and test any change in intrinsic parameters along with circuit emphasis.

show abstract

Section: Introductionmentioning

confidence: 99%

Parameter extraction and selection for a scalable N-type SiC MOSFETs model and characteristic verification along with conventional dc-dc buck converter integration

et al. 2023

View full text Add to dashboard Cite

show abstract

“…Devices made of GaN also have a very small on-resistance for a specific breakdown voltage than Si devices. The device's on-resistance (R (ON) ) has inverse relation to both the third power of the energy gap E G and the electron mobility (µ) [11,12].…”

Section: Introductionmentioning

confidence: 99%

Design and Comparative Analysis of an Ultra-Highly Efficient, Compact Half-Bridge LLC Resonant GaN Converter for Low-Power Applications

2023

View full text Add to dashboard Cite

For low-power applications, this paper presents the development and design of a compact and ultra-highly efficient half-bridge LLC resonant converter. By using Galium Nitride (GaN) devices and high-efficient magnetics, the efficiency and power density of resonant converters can be improved. Compared to Silicon MOSFETs, GaN high-electron-mobility transistors (GaN HEMT) have a lower output capacitance and gate charge, resulting in lower driving loss and shorter dead times. Consequently, the proposed LLC converter based on GaN devices has excellent performance characteristics such as ultra-high efficiency, low switching losses, compact size, high voltage endurance, high operating temperature and high operating frequency. Furthermore, the proposed resonant converter features soft switching properties that ensure that the switches and diodes on the primary side are always switched at zero voltage and current. By doing so, LLC resonant converter switching losses are significantly reduced by up to 3.1%, and an overall efficiency of 98.5% is achieved. The LLC resonant converter design with GaN HEMT has great advantages over Si MOSFET solution regarding efficiency, overall losses, switching loose and power factor correction. A 240 W, 240 V to 60 V half-bridge GaN HEMT LLC resonant converter is simulated with a switching frequency of 75 KHz, along with the comparative analysis of the Si metal oxide semiconductor field effect transistor (MOSFET) solution. Moreover, the design and analysis of highly efficient magnetics with a power factor of 0.99 at full load is presented. A 240-Watt single stage LED driver with power factor correction is also designed to verify and compare the performance of proposed LLC resonant converter.

show abstract

“…Though, MMC requires less input sources than cascaded H-bridge inverter. The MMC has lots of advantages over than Voltage Source Converter (VSC) [3][4]. At the time of fast recovery and fault from short circuit it leads to current limiting ability and there is no need of filter to achieve high gain in the system.…”

Section: Introductionmentioning

confidence: 99%

Modular-Multilevel Inverter based on Various Switching Modules for Harmonic Elimination in HVDC

2019

IJITEE

View full text Add to dashboard Cite

For transmitting the power and reducing harmonic distortion at long distance HVDC system in industrial application the Modular Multilevel Converter (MMC) is utilized. While contrasted and AC system, HVDC system utilized this technique as a result of its cost effective function, effectiveness of high transmission rate. MMC is for the most part utilized for reducing the filter size. In industrial application, it is extensively used for voltage balance, control of circuiting current at each arm and reduces the voltage ripple. In this paper MMC based various switching modules are used to mitigate the Total Harmonics Distortion (THD) that presents in the HVDC line. MMC has used in HVDC and LVDC applications. MMC is analyses and concludes the advantages and enhancement of converter modulation for reduce the voltage ripple.

show abstract

Multi-Port High Voltage Gain Modular Power Converter for Offshore Wind Farms

Cited by 11 publications

References 29 publications

Parameter extraction and selection for a scalable N-type SiC MOSFETs model and characteristic verification along with conventional dc-dc buck converter integration

Parameter extraction and selection for a scalable N-type SiC MOSFETs model and characteristic verification along with conventional dc-dc buck converter integration

Design and Comparative Analysis of an Ultra-Highly Efficient, Compact Half-Bridge LLC Resonant GaN Converter for Low-Power Applications

Modular-Multilevel Inverter based on Various Switching Modules for Harmonic Elimination in HVDC

Contact Info

Product

Resources

About