Multi-model hierarchy approach to simulate barrel reactors for epitaxial silicon deposition

Modeling of large-scale horizontal reactor for silicon epitaxy

“…1D or 2D). The modeling procedure adopted here could be defined as multi-hierarchy and a detailed presentation of its development can be found in the literature [1][2][3]. Moreover, the models adopted here were well described in the literature and thus they will be only briefly summarized here [1][2][3][4][5].…”

Designing a large scale CVD reactor for GaAs growth on Ge substrates by multi‐hierachy modeling

“…A fixed temperature was imposed on the graphite susceptor and the temperatures of all the surfaces of the reactor were calculated solving the energy balance equation. However, model equations will be here omitted because well described in the literature [3,[10][11][12]. One of the main outcome of these simulations is the evolution of reactants concentrations due to the combination of mass transport, gas phase and surface reactions within the reactor and the resulting film growth rate.…”

“…The geometry of the reactor used for the simulations and the operating conditions adopted in the simulations, are sketched in Figure 2. Deposition on heated substrates was simulated using a combination of models of different complexity, ranging from the 1D representation to the 2D and 3D ones and thus adopting a so-called multi-hierarchy approach [3,10]. The gas phase species concentrations and the temperature profiles were determined through the solution of the mass, momentum and energy balance equations for a diluted gas mixture.…”

Modeling of flame assisted chemical vapor deposition of silicon films

“…The former yields a stagnation flow, which, aside from unavoidable edge effects, is inherently scalable to large deposition areas. 2 Multi-hierarchy modeling procedure This aspect will be here only briefly summarized, since further details can be found elsewhere [6][7][8][9]. The models adopted to design the FACVD reactor were, in order of decreasing complexity, the following: (a) detailed 2D axial symmetric model, (b) one-dimensional simplified model (PFR), and (c) zero-dimensional model (CSTR).…”

“…The pilot plant scale deposition reactor sketched in figure 1 was here designed through a multi-hierarchical modeling procedure [6], involving a series of models of increasing complexity. The advantage of this procedure is the very fast design of the main chamber dimensions as well as the definition of the process set point conditions before entering in the numerically heavier simulations that are here indeed dedicated to the nozzle design and the final verification of the whole system.…”