Modeling of large-scale horizontal reactor for silicon epitaxy

Veneroni, Alessandro; Moscatelli, Davide; Masi, Maurizio

doi:10.1016/j.jcrysgro.2004.10.108

Cited by 7 publications

(6 citation statements)

References 5 publications

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“…For the silicon film deposition, one of the most frequently-used silicon precursors in the industry is trichlorosilane (SiHCl 3 , TCS) [1][2][3], because of its very high purity, reasonable cost and ease of use.…”

Section: Introductionmentioning

confidence: 99%

Surface and gas phase reactions induced in a trichlorosilane–SiHx system for silicon film deposition

Sakurai

Saito

Habuka

2015

Surface and Coatings Technology

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Section: Introductionmentioning

confidence: 99%

Surface and gas phase reactions induced in a trichlorosilane–SiHx system for silicon film deposition

Sakurai

Saito

Habuka

2015

Surface and Coatings Technology

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“…In contrast, the slight decrease in the SiCl + group, from 13 to 6%, could be recognized. Because the 5% increase in the SiCl 3 + group was comparable to the 7% decrease in the SiCl + group, the increase in the hydrogen concentration was considered to play a role in decreasing the SiCl 2 production in the gas phase.…”

Section: Resultsmentioning

confidence: 99%

“…Semiconductor silicon film is a widely used material in various fields including microelectronics, solar cells and power electronics. In industry, trichlorosilane gas [1][2][3] is quite often used for producing silicon films by means of chemical vapor deposition (CVD), because the very high purity trichlorosilane is widely available at a reasonable price, and because its storage and use are easier and safer than the other silicon precursors.…”

mentioning

confidence: 99%

“…The silicon film deposition using chlorosilane gases has been studied for many years by various researchers. [1][2][3][4][5] They mainly evaluated the chemical species and processes accounting for the deposition rate in order to improve the CVD processes and to design the CVD reactors. In a trichlorosilane-hydrogen system and in a cold wall system, trichlorosilane was shown to directly reach the silicon substrate surface for producing the silicon film.…”

mentioning

confidence: 99%

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By-Product Formation in a Trichlorosilane-Hydrogen System for Silicon Film Deposition

Habuka

Sakurai

Saito

2014

ECS J. Solid State Sci. Technol.

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The process of by-product formation during silicon film deposition using trichlorosilane gas was studied by two types of the in situ measurement techniques, such as the langasite crystal microbalance (LCM) and the quadrupole mass spectra (QMS) analyzer, installed at the exhaust of the chemical vapor deposition (CVD) reactor. With the increasing hydrogen gas concentration, the QMS showed that the partial pressure related to SiCl 2 decreased. Simultaneously, the deposition on the LCM surface decreased. Because SiCl 2 gradually produces the burnable by-product of (SiCl 2 ) n , an oily silane, at the exhaust, the CVD parameters effective for suppressing the SiCl 2 formation were evaluated. © The Author Semiconductor silicon film is a widely used material in various fields including microelectronics, solar cells and power electronics. In industry, trichlorosilane gas 1-3 is quite often used for producing silicon films by means of chemical vapor deposition (CVD), because the very high purity trichlorosilane is widely available at a reasonable price, and because its storage and use are easier and safer than the other silicon precursors.The silicon film deposition using chlorosilane gases has been studied for many years by various researchers.1-5 They mainly evaluated the chemical species and processes accounting for the deposition rate in order to improve the CVD processes and to design the CVD reactors. In a trichlorosilane-hydrogen system and in a cold wall system, trichlorosilane was shown to directly reach the silicon substrate surface for producing the silicon film.5 Additionally, the silicon deposition rate could be sufficiently described following an Eley-Rideal surface reaction model. 5 Although SiCl 2 was shown to be produced by the thermal decomposition of trichlorosilane in the gas phase of the cold wall environment, its amount was shown to be too low to influence the film deposition rate.However, from a different point of view for achieving a safe operation for the long-term use of the CVD reactor in industry, the by-product, called oily silane, 6 must be taken care. After the repetitive CVD operation for a month or more, an enormous amount of oily silane often fills the exhaust tube. Thus, the exhaust tube is periodically cleaned. However, this operation has several problems. The cleaning operation requires several hours. Additionally, the oily silane is burnable and sometimes explodes.7 In order to avoid disastrous accidents, the conditions producing oily silane should be further studied relating to the SiCl 2 formation, because the oily silane has been identified as polymerized SiCl 2 , 8 (SiCl 2 ) n . (In detail, X-(SiCl 2 ) n -Y. X and Y are end groups). Additionally, when the silicon wafer diameter is enlarged from 300 mm to 450 mm in the future, the by-product problem will become more serious due to the huge consumption of the precursor.Based on empirical information, 9 keeping the exhaust warm is considered to be effective for decreasing the oily silane deposition. Additionally, from the viewpoint o...

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“…The temperature of the substrate and the susceptor is set to 1373 K. The susceptor rotation rate is typically 20 rpm, in this study. The numerical calculation is performed using the transport and epitaxy model [1][2][3], shown in Figure 2. This model assumes the surface chemical reactions on the silicon substrate surface, as follows:…”

Section: Reactor and Calculation Modelmentioning

confidence: 99%

Small-Batch Reactor Development for Silicon Epitaxial Film Growth Based on Theory of Transport Phenomena

et al. 2007

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Transport phenomena and surface reaction rate in the small-batch horizontal cold-wall silicon epitaxial reactor at atmospheric pressure are studied using computational fluid dynamics. According to the effect and the role of the gas inlet in a trichlorosilane-hydrogen system, the combination of two or three gas inlet zones is considered to achieve the uniform epitaxial film profile. The susceptor rotation rate is also a parameter to adjust the film thickness profile.

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Modeling of large-scale horizontal reactor for silicon epitaxy

Cited by 7 publications

References 5 publications

Surface and gas phase reactions induced in a trichlorosilane–SiHx system for silicon film deposition

Surface and gas phase reactions induced in a trichlorosilane–SiHx system for silicon film deposition

By-Product Formation in a Trichlorosilane-Hydrogen System for Silicon Film Deposition

Small-Batch Reactor Development for Silicon Epitaxial Film Growth Based on Theory of Transport Phenomena

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