Multi-level device models developed for the virtual test bed (VTB)

Wang, X.; Lu, L.; Pytel, S.G.; Franzoni, D.; Santi, Enrico; Hudgins, J.L.; Palmer, P.R.

doi:10.1109/ias.2004.1348830

Cited by 7 publications

(2 citation statements)

References 16 publications

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“…The most accurate numerical semiconductor devices models are implemented using finite-element techniques. They are based on a full three-or two-dimensional description of the devices, giving it the capability of capturing charge carriers motion and its associated electrical fields [7]. Thermal modelling is also possible where heat distribution and flux can be calculated.…”

Section: Power Diode Modelsmentioning

confidence: 99%

“…However, such models are so complicated for system-level modelling. In Physics-based models, physical equations that describe the device are used for devices modelling [7][8][9]. After solving the ambipolar equation charge distribution inside the devices could be established and relation between terminal current and inner charge evolution as function of time is also possible to be obtained.…”

Section: Power Diode Modelsmentioning

confidence: 99%

See 1 more Smart Citation

Simplified models of forward conduction for SiC power PiN and Schottky diodes with temperature dependency

Abuishmais¹,

Undeland²

2010

5th IET International Conference on Power Electronics, Machines and Drives (PEMD 2010)

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Testing and verifying new design ideas for power electronic systems by simulations rely on accuracy of device models. For SiC-based devices, lack of reliable models that accurately describe device performance at different temperatures is noticed. Models are either complex and requiring detailed device structure or isothermal without temperature dependency. In this paper simple power rectifier models for use by power electronics application engineers with wide temperature range are represented. This work benefits from the available models in literature and extends their soundness to a temperature range at which SiC devices are expected to function. Simulation results of forward conduction characteristics were compared with measurement results to check the credibility of used models.

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Section: Power Diode Modelsmentioning

confidence: 99%

Section: Power Diode Modelsmentioning

confidence: 99%