Simplified models of forward conduction for SiC power PiN and Schottky diodes with temperature dependency

Abstract

Testing and verifying new design ideas for power electronic systems by simulations rely on accuracy of device models. For SiC-based devices, lack of reliable models that accurately describe device performance at different temperatures is noticed. Models are either complex and requiring detailed device structure or isothermal without temperature dependency. In this paper simple power rectifier models for use by power electronics application engineers with wide temperature range are represented. This work benefits from the available models in literature and extends their soundness to a temperature range at which SiC devices are expected to function. Simulation results of forward conduction characteristics were compared with measurement results to check the credibility of used models.

On understanding and driving SiC power JFETs

“…Fig. 1 shows the equivalent schematic model for a JFET [4]. At the gate-source junction, a variable capacitance appears which resembles a classical MOSFET's gate-source capacitance but has a lower value in comparison to a MOSFET.…”