Multi-level conduction in NiO resistive memory device prepared by solution route

Kannan, V.; Senthilkumar, V.; Rhee, Jin‐Koo

doi:10.1088/0022-3727/46/9/095301

Cited by 25 publications

(21 citation statements)

References 27 publications

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“…Furthermore, in the light of CF model the observed multilevel switching behaviour can be explained in terms of gradual increase in filament size on increasing I CC during set process. 17 We propose that as I CC increases, the diameter of the CF-increases, consequently, the R ON decreases resulting in different R ON values. As a result, the reset voltage decreases with increasing I CC , as shown in Fig.…”

mentioning

confidence: 96%

Multilevel unipolar resistive memory switching in amorphous SmGdO3 thin film

Sharma

Misra

Pavunny

et al. 2014

Applied Physics Letters

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Multilevel resistive switching was observed in random access memory device using amorphous SmGdO3 (SGO) ternary oxide thin films. Non-volatile and stable 4-level resistance states with sufficient margin of resistance ratios were observed by varying compliance current which was attributed to compliance current dependent variation in size of conducting filaments. As fabricated Pt/SGO/Pt devices exhibited excellent switching parameters such as stable resistance ratios of reset (ON) to set (OFF) states, non-overlapping switching voltages, excellent data retention, and endurance. Temperature dependent variation of resistances of ON and OFF states of the device was studied to elucidate current conduction and resistive switching mechanisms.

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confidence: 96%

Multilevel unipolar resistive memory switching in amorphous SmGdO3 thin film

Sharma

Misra

Pavunny

et al. 2014

Applied Physics Letters

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“…In addition, ReRAM has multilevel data storage capability. The memory density can be increased efficiently with multilevel data storage, resulting in reduction of production cost of ReRAM 5 6 7 8 .…”

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confidence: 99%

Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth

Song

Lee

2016

Sci Rep

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Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements of high density, fast switching speed, and reliable data storage. In this study, resistive switching memory devices were fabricated with nano-template-assisted bottom up growth. The electrochemical deposition was adopted to achieve the bottom-up growth of nickel nanodot electrodes. Nickel oxide layer was formed by oxygen plasma treatment of nickel nanodots at low temperature. The structures of fabricated nanoscale memory devices were analyzed with scanning electron microscope and atomic force microscope (AFM). The electrical characteristics of the devices were directly measured using conductive AFM. This work demonstrates the fabrication of resistive switching memory devices using self-assembled nanoscale masks and nanomateirals growth from bottom-up electrochemical deposition.

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“…3(b) with a dependence of HRS current on temperature in the form of I = I 0 exp(− /kT) where is the thermal activation energy with value of ∼410 meV. As discussed above in unipolar switching the switching between LRS and HRS Downloaded by [Heriot-Watt University] at 14:37 08 October 2014 is usually understood to be due to formation and rupture of conducting filament formed out of the metallic precipitates such as metallic nickel in NiO RRAM (13) and metallic Gadolinium in LaGdO 3 RRAM devices (14). TEM and XPS investigations have confirmed the presence of these metallic precipitates.…”

Section: Results and Discussonsmentioning

confidence: 99%

Resistive Switching and Current Conduction Mechanisms in Amorphous LaLuO₃ Thin Films Grown by Pulsed Laser Deposition

Misra

Pavunny

Sharma

et al. 2014

Integrated Ferroelectrics

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The unipolar resistive switching characteristics of the amorphous LaLuO 3 thin films deposited by pulsed laser deposition have been studied. Reliable and repeatable nonvolatile switching of the resistance of LaLuO 3 films was obtained between two well defined states of low and high resistance with nearly constant resistance ratio ∼10 7 and non-overlapping switching voltages in the range of 0.66-0.83 V and 1.9-2.7 V respectively. The temperature dependent measurement revealed metallic and semiconducting behavior in low and high resistance states respectively. The switching between low and high resistance states was attributed to the change in the separation between oxygen vacancies in light of the correlated barrier hopping theory. The current conduction mechanism of the device in high-resistance state followed the Poole's law, whereas the conduction in low-resistance state was found to be dominated by percolation. The resistance of low and high resistance states of the film showed no obvious degradation for up to ∼10 4 seconds indicating good retention. The achieved characteristics of the resistive switching in LaLuO 3 thin films seem to be promising for futuristic nonvolatile memory applications.

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Multi-level conduction in NiO resistive memory device prepared by solution route

Cited by 25 publications

References 27 publications

Multilevel unipolar resistive memory switching in amorphous SmGdO3 thin film

Multilevel unipolar resistive memory switching in amorphous SmGdO3 thin film

Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth

Resistive Switching and Current Conduction Mechanisms in Amorphous LaLuO₃ Thin Films Grown by Pulsed Laser Deposition

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Multi-level conduction in NiO resistive memory device prepared by solution route

Cited by 25 publications

References 27 publications

Multilevel unipolar resistive memory switching in amorphous SmGdO3 thin film

Multilevel unipolar resistive memory switching in amorphous SmGdO3 thin film

Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth

Resistive Switching and Current Conduction Mechanisms in Amorphous LaLuO3 Thin Films Grown by Pulsed Laser Deposition

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Resistive Switching and Current Conduction Mechanisms in Amorphous LaLuO₃ Thin Films Grown by Pulsed Laser Deposition