Multi-carrier transport properties in p-type ZnO thin films

Ye, H.B.; Kong, Jinyu; Pan, Wei; Shen, Wei; Wang, B.

doi:10.1016/j.ssc.2009.06.030

Cited by 2 publications

(1 citation statement)

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“…In addition, this leads to the electrical properties of the films which are similar with those of the pure ZnO thin film (n-type) and also the lower carrier concentration [ 43 ]. Furthermore, the insulating quartz substrate is nonconductive to generate p-type semiconductors [ 44 ].…”

Section: Resultsmentioning

confidence: 99%

Effect of Oxidation Condition on Growth of N: ZnO Prepared by Oxidizing Sputtering Zn-N Film

Qin

Lin

et al. 2016

Nanoscale Res Lett

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Nitrogen-doped zinc oxide (N: ZnO) films have been prepared by oxidizing reactive RF magnetron-sputtering zinc nitride (Zn-N) films. The effect of oxidation temperature and oxidation time on the growth, transmittance, and electrical properties of the film has been explored. The results show that both long oxidation time and high oxidation temperature can obtain the film with a good transmittance (over 80 % for visible and infrared light) and a high carrier concentration. The N: ZnO film exhibits a special growth model with the oxidation time and is first to form a N: ZnO particle on the surface, then to become a N: ZnO layer, and followed by the inside Zn-N segregating to the surface to oxidize N: ZnO. The surface particle oxidized more adequately than the inside. However, the X-ray photoemission spectroscopy results show that the lower N concentration results in the lower N substitution in the O lattice (No). This leads to the formation of n-type N: ZnO and the decrease of carrier concentration. Thus, this method can be used to tune the microstructure, optical transmittance, and electrical properties of the N: ZnO film.

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Section: Resultsmentioning

confidence: 99%