Effect of Oxidation Condition on Growth of N: ZnO Prepared by Oxidizing Sputtering Zn-N Film

Abstract

Nitrogen-doped zinc oxide (N: ZnO) films have been prepared by oxidizing reactive RF magnetron-sputtering zinc nitride (Zn-N) films. The effect of oxidation temperature and oxidation time on the growth, transmittance, and electrical properties of the film has been explored. The results show that both long oxidation time and high oxidation temperature can obtain the film with a good transmittance (over 80 % for visible and infrared light) and a high carrier concentration. The N: ZnO film exhibits a special growth model with the oxidation time and is first to form a N: ZnO particle on the surface, then to become a N: ZnO layer, and followed by the inside Zn-N segregating to the surface to oxidize N: ZnO. The surface particle oxidized more adequately than the inside. However, the X-ray photoemission spectroscopy results show that the lower N concentration results in the lower N substitution in the O lattice (No). This leads to the formation of n-type N: ZnO and the decrease of carrier concentration. Thus, this method can be used to tune the microstructure, optical transmittance, and electrical properties of the N: ZnO film.

Hydrothermal Synthesis of ZnO Structures Formed by High-Aspect-Ratio Nanowires for Acetone Detection

“…For gas sensor applications, ZnO is one of the promising materials. Moreover, low-dimensional ZnO materials have a large surface-to-volume ratio, which can be used as a potential material on gas-sensing devices [ 14 – 20 ]. ZnO nanostructures with different morphologies have been synthesized through a wide range of preparation methods [ 21 , 22 ].…”