MRC for curvilinear mask shapes

Bork, Ingo; Tritchkov, Alexander; Shang, Shumay; Levine, E.; Zuo, Mary

doi:10.1117/12.2575474

Cited by 7 publications

(2 citation statements)

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“…67) With capability established for writing masks with curvilinear features with reasonable write times and pattern quality, other elements of mask-making relevant to the fabrication of such masks are being addressed. In terms of EDA infrastructure, software for mask process corrections (MPC) 68) and mask rules check (MRC) 69,70) need to be adapted for application to curvilinear features.…”

Section: Computational Lithography Capabilitiesmentioning

confidence: 99%

High-NA EUV lithography: current status and outlook for the future

Levinson¹

2022

Jpn. J. Appl. Phys.

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High-NA extreme ultraviolet (EUV) lithography is currently in development. Fabrication of exposure tools and optics with a numerical aperture (NA) equal to 0.55 has started at ASML and Carl Zeiss. Lenses with such high NA will have very small depths-of-focus, which will require improved focus systems and significant improvements in wafer flatness during processing. Lenses are anamorphic to address mask 3D issues, which results in wafer field sizes of 26 mm × 16.5 mm, half that of lower NA EUV tools and optical scanners. Production of large die will require stitching. Computational infrastructure is being created to support high-NA lithography, including simulators that use Tatian polynomials to characterize the aberrations of lenses with central obscurations. High resolution resists that meet the line-edge roughness (LER) and defect requirements for high-volume manufacturing (HVM) also need to be developed. High power light sources will also be needed to limit photon shot noise.

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Section: Computational Lithography Capabilitiesmentioning

confidence: 99%

High-NA EUV lithography: current status and outlook for the future

Levinson¹

2022

Jpn. J. Appl. Phys.

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“…checks, which produced well-defined algorithms to compute them. For curvilinear masks there are questions such as what is a corner, or where to measure a width? , It is possible that as these check definitions become more mature and accepted across the industry, there will be more opportunity to define them based on physical manufacturing limitations which can potentially be modeled and penalized by geometric measurements which are well-defined by various level-set differential operators. The optimization framework of ILT is in a good position to incorporate these checks, and is already doing so in practice, even though the commonly agreed upon definitions are still being debated at large.…”

Section: Practical Considerations For Manufacturingmentioning

confidence: 99%

Advances in Inverse Lithography

et al. 2022

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As Moore’s law has marched forward, progressively shrinking chip designs at a consistent pace, the manufacturing of those chips has raced to keep up. Through advances in lithography hardware and software, we now are in the realm of the single-digit-nanometer design nodes at leading chip foundries. This paper will review the method of Inverse Lithography Technology (ILT), which is the preferred computational method for photolithography. Indeed photolithographic masks were the first metasurfaces, and still the most important metasurface, economically, used in memory chips, storage, and microprocessors. Moreover, photolithographic mask designers were the early adopters of the mathematical optimization in optics, creating ILT, specifying intended wafer patterns and metrics, and using the mathematical machinery of level sets, functional derivatives, and adjoints to drive the mask design process.

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